参数资料
型号: MAX2032ETP+
厂商: Maxim Integrated
文件页数: 11/19页
文件大小: 0K
描述: IC MIXER UP/DOWN CONVER 20TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 60
RF 型: GSM,EDGE,CDMA
频率: 650MHz ~ 1GHz
混频器数目: 1
噪音数据: 7dB
次要属性: 升/降频器
电流 - 电源: 85mA
电源电压: 4.75 V ~ 5.25 V
包装: 管件
封装/外壳: 20-WQFN 裸露焊盘
供应商设备封装: 20-TQFN-EP(5x5)
High-Linearity, 650MHz to 1000MHz Upconversion/
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, optimized for the 700MHz band (see Table 1) , C1 = 7pF, C5 = 3.3pF, L1 and C4 are not used, V CC =
5V, P LO = 0dBm, P RF = 0dBm, f LO > f RF , f IF = 140MHz, T C = +25°C, unless otherwise noted.)
Downconverter Curves
-10
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-15
T C = -40°C
-15
P LO = +3dB     m
-15
V CC = 5.25V
-20
-20
-20
-25
T C = +25°C
T C = +85°C
-25
P LO = 0dBm
P LO = -3dBm
-25
V CC = 5.0V
V CC = 4.75V
-30
790
840
890
940
990
-30
790
840
890
940
990
-30
790
840
890
940
990
-20
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-25
T C = -40°C
-25
P LO = +3dBm
-25
V CC = 5.25    V
V CC = 5.0V
-30
-30
P LO = 0dBm
-30
V CC = 4.75    V
T C = +25°C
-35
T C = +85°C
-35
P LO = -3dBm
-35
-40
790
840
890
940
990
-40
790
840
890
940
990
-40
790
840
890
940
990
60
50
LO FREQENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
T C = +85°C
60
50
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
60
50
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
40
T C = -40°C
T C = +25°C
40
P LO = -3dBm, 0dBm, +3dB     m
40
V CC = 4.75V, 5.0V, 5.25V
30
30
30
650
700
750
800
850
650
700
750
800
850
650
700
750
800
850
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________
11
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