? Maxim Integrated Products 3
MAX31826
1-Wire Digital Temperature Sensor
with 1Kb Lockable EEPROM
Note 1:   Limits are 100% production tested at T
A
= +25癈 and/or T
A
= +85癈. Limits over the operating temperature range and
relevant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
Note 2:   All voltages are referenced to ground.
Note 3:   The pullup supply voltage specification assumes that the pullup device is ideal, and therefore the high level of the pullup
is equal to V
PU
. To meet the devices V
IH
specification, the actual supply rail for the strong pullup transistor must include
margin for the voltage drop across the transistor when it is turned on; thus: V
PU_ACTUAL
= V
PU_IDEAL
+ V
TRANSISTOR
.
Note 4:   Guaranteed by design. These limits represent a three sigma distribution.
Note 5:   To guarantee a presence pulse under low-voltage parasite-power conditions, V
ILMAX
might need to be reduced to as low
as 0.5V.
Note 6:   Logic-high voltages are specified at a 1mA source current.
Note 7:   Standby current specified up to T
A
= +70NC. Standby current typically is 3FA at T
A
= +125NC.
Note 8:   To minimize I
DDS
, DQ should be within the following ranges: V
GND
P V
DQ
P V
GND
+ 0.3V or V
DD
- 0.3V P V
DQ
P V
DD
.
Note 9:   Active current refers to supply current during active temperature conversions or EEPROM writes.
Note 10: DQ line is high (high-impedance state).
Note 11: See the 1-Wire Timing Diagrams.
Note 12: Under parasite power, if t
RSTL
> 960Fs, a power-on reset (POR) can occur.
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 3.0V to 3.7V, T
A
= -55癈 to +125癈, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Temperature Conversion Time
t
CONV
12-bit resolution
150
ms
Time to Strong Pullup On
t
SPON
Start Convert T command, or Copy
Scratchpad 2 command issued
10
Fs
Time Slot
t
SLOT
(Note 11)
60
120
Fs
Recovery Time
t
REC
(Note 11)
1
Fs
Write-Zero Low Time
t
LOW0
(Note 11)
60
120
Fs
Write-One Low Time
t
LOW1
(Note 11)
1
15
Fs
Read Data Valid
t
RDV
(Note 11)
15
Fs
Reset Time High
t
RSTH
(Note 11)
480
Fs
Reset Time Low
t
RSTL
(Notes 11, 12)
480
Fs
Presence-Detect High
t
PDHIGH
(Note 11)
15
60
Fs
Presence-Detect Low
t
PDLOW
(Note 11)
60
240
Fs
DQ Capacitance
C
IN/OUT
25
pF
AD0AD3 Capacitance
C
IN_AD
50
pF
NONVOLATILE MEMORY
EEPROM Write/Erase Cycles
N
EEWR
At T
A
= +25癈
200k
At T
A
= +85癈 (worst case)
50k
EEPROM Data Retention
t
EEDR
At T
A
= +85癈 (worst case)
40
Years
EEPROM Write Time
t
WR
20
25
ms