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参数资料
| 型号： | MAX3656ETG+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 12/15页 |
| 文件大小： | 0K |
| 描述： | IC LASR DRVR 2.5GBPS 3.6V 24TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1 |
| 类型： | 激光二极管驱动器（光纤） |
| 数据速率： | 2.5Gbps |
| 通道数： | 1 |
| 电源电压： | 3 V ~ 3.6 V |
| 电流 - 电源： | 40mA |
| 电流 - 调制： | 85mA |
| 电流 - 偏置： | 70mA |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-WFQFN 裸露焊盘 |
| 供应商设备封装： | 24-TQFN-EP（4x4） |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 产品目录页面： | 1423 (CN2011-ZH PDF) |
| 其它名称： | MAX3656ETG+TDKR |
155Mbps to 2.5Gbps Burst-Mode
Laser Driver
Design Example
Select Laser
Select a communication-grade laser for the proper data
rate. Assume the laser output average power is P AVG =
0dBm, the operating temperature is -40 ° C to +85 ° C ,
and the laser diode has the following characteristics:
wavelength: λ = 1.3μm, threshold current: I TH = 22mA
at +25 ° C, threshold temperature coefficient: β TH =
1.3%/ ° C, laser-to-monitor transfer: ρ MON = 0.2A/W
( ρ MON = ρ MONITORDIODE x L LASER-TO-MONITORDIODE) ,
and laser slope efficiency: η = 0.05mW/mA at +25 ° C.
Determining R APCSET
The desired monitor diode current is estimated by I MD =
P AVG ? ρ MON = 200μA. The I MD vs. R APCSET graph in the
Typical Operating Characteristics shows R APCSET at 12k Ω .
Determining R MODSET
Assuming r e = 10 and an average power of 0dBm (1mW),
the peak-to-peak optical power P P-P = 1.64mW (Table 1).
The required modulation current is 1.64(mW)/0.05(mW/mA)
= 32.8mA. The I MOD vs. R MODSET graph in the Typical
Operating Characteristics shows R MODSET at 9k Ω .
Determining R BIASMAX
Determine the maximum threshold current (I TH(MAX) ) at
T A = +85 ° C and end of life. Assuming (I TH(MAX) ) =
50mA, the maximum bias current should be:
I BIASMAX = I TH(MAX)
In this example, I BIASMAX = 50mA. The I BIASMAX
vs. R BIASMAX graph in the Typical Operating Charact-
eristics shows R BIASMAX at 8k Ω .
V CC
130 Ω
Z O = 50 Ω
Z O = 50 Ω
100 Ω
IN+
IN-
Z O = 50 Ω
82 Ω
V CC
IN+
Z O = 50 Ω
BEN+
MAX3656
MAX3656
100 Ω
130 Ω
Z O = 50 Ω
BEN-
Z O = 50 Ω
V CC
130 Ω
82 Ω
IN-
Figure 5. Connecting to CML Outputs
IN+
Z O = 50 Ω
BEN+
V CMBEN + (100mV to 800mV)
IN-
82 Ω
V CC
130 Ω
V CMBEN
V CMBEN - (100mV to 800mV)
3.3V
BEN+
BEN-
Z O = 50 Ω
82 Ω
BEN-
V CMBEN = +2.0V
R 1 = 1.65k Ω
R 2 = 2.54k Ω
MAX3656
Figure 4. Connecting to PECL Outputs
Figure 6. Single-Ended Biasing for Burst Enable
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX3656EVKIT | 功能描述:激光驱动器 Evaluation Kit for the MAX3656 RoHS:否 制造商:Micrel 数据速率:4.25 Gbps 工作电源电压:3 V to 3.6 V 电源电流:80 mA 最大工作温度:+ 85 C 封装 / 箱体:QFN-16 封装:Tube |
| MAX3656EVKIT+ | 功能描述:电源管理IC开发工具 MAX3656 Eval Kit RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| MAX3657BE/D | 功能描述:跨阻抗放大器 RoHS:否 制造商:Texas Instruments 封装 / 箱体:SOIC-14 带宽:3 MHz 工作电源电压:36 V 电源电流:5.5 mA 工作温度范围:- 40 C to + 85 C 封装:Tube |
| MAX3657BE/D DIE | 制造商:Maxim Integrated Products 功能描述: |
| MAX3657E/D | 功能描述:跨阻抗放大器 RoHS:否 制造商:Texas Instruments 封装 / 箱体:SOIC-14 带宽:3 MHz 工作电源电压:36 V 电源电流:5.5 mA 工作温度范围:- 40 C to + 85 C 封装:Tube |
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