参数资料
型号: MAX4273ESE+
厂商: Maxim Integrated
文件页数: 17/26页
文件大小: 0K
描述: IC CNTRLR HOT SWAP 16-SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
类型: 热交换控制器
应用: 通用
内部开关:
电源电压: 2.7 V ~ 13.2 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 管件
3V to 12V Current-Limiting Hot-Swap Controllers
with Autoretry, DualSpeed/BiLevel Fault Protection
CTON determines the maximum time allowed to com-
plete turn-on for the MAX4273. The default values for
turn-on time (t ON ) and t RETRY are chosen by leaving
these pins floating; they are 10μs and 320μs, respec-
tively. These are also the minimum values (not con-
trolled and dependent on stray capacitance). Longer
timings are determined by the size of the capacitor
according to Figure 8, and can be determined in Table
5, which lists the startup and retry timing parameters.
Set the t ON timer long enough to allow for the MOSFET to
be enhanced and the load capacitor to be charged com-
pletely .
There are two ways of completing the startup sequence.
Case A describes a startup sequence that does not use
the current-limiting feature and slowly turns on the MOS-
FET by limiting the gate dv/dt. Case B uses the current-
limiting feature and turns on the MOSFET as fast as
possible while still preventing a high inrush current.
Case A. Startup Without Current Regulation
There are three ways to turn on the MOSFET without
reaching the fast comparator current limit:
1) If the board capacitance is small, the inrush current
is low.
2) If the gate capacitance is high, the MOSFET turns on
slowly.
3) The fast comparator can be disabled (MAX4273
only).
In all three cases, t ON is determined only by the charge
required to enhance the MOSFET. Effectively, the small
gate-charging current limits the output voltage dv/dt.
This time can be extended by connecting an external
capacitor between GATE and GND (MAX4271/
MAX4272) (Figure 9) or between GATE and CEXT
(MAX4273). The turn-on time is dominated by the exter-
nal gate capacitance if this value is considerably higher
than the MOSFET gate capacitance. Table 6 shows the
timing required to enhance the recommended MOSFET
800
700
600
500
400
300
200
FAST COMPARATOR THRESHOLD
VOLTAGE vs. RTH
RTH (k Ω ) = V TH , FC (mV)/10
DISABLED FOR
RTH < 200 Ω
INDETERMINATE,
with or without the external capacitor; Figure 3 shows
the related waveforms and timing diagrams. (See Time
to Charge Gate vs. C GATE and Startup Time with
C BOARD = 0 in the Typical Operating Characteristics .)
Remember that a high gate capacitance also increases
the turn-off time (t OFF ), except in the case of a
MAX4273 fast fault.
If an external gate capacitor is not used, R S is not nec-
essary. R S prevents MOSFET self-oscillations that can
occur when C GATE is high while C BOARD is low.
Electrical characteristics as specified by the manufac-
turer’s data sheet are:
100
0
0
10
20
NOT RECOMMENDED FOR
RTH < 5k Ω
30 40 50 60
70
80
FDS6670A: C ISS = 3200pF, Q T (MAX) = 50nC, R DS(ON) =
8.2m Ω
IRF7401: C ISS = 1600pF, Q T (MAX) = 48nC, R DS(ON) =
RTH (k Ω )
Figure 7. Fast Comparator Threshold vs. RTH
22m Ω
MMSF5N03HD: C ISS = 1200pF, Q T (MAX) = 21nC,
R DS(ON) = 40m Ω
Table 5. Startup and Retry Timing Parameters
PART
MAX4271
MAX4272
MAX4273*
DEFAULT (μs)
10
10
10
t ON
EXTERNALLY SET
t ON (ms) = 0.31 x CTIM (nF)
t ON (ms) = 0.31 x CTIM (nF)
t ON (ms) = 0.31 x CTON (nF)
DEFAULT (μs)
320
320
t RETRY
EXTERNALLY SET
No retry available
t RETRY (ms) = 32 x t ON = 10 x CTIM (nF)
t RETRY (ms) =10 x CTIM (nF)
*MAX4273 retry feature disabled by connecting CTIM to V IN .
______________________________________________________________________________________
17
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