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参数资料
| 型号： | MAX4409ETP+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/20页 |
| 文件大小： | 0K |
| 描述： | IC AMP AUDIO .08W STER AB 20TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | DirectDrive® |
| 类型： | AB 类 |
| 输出类型： | 耳机，2-通道（立体声） |
| 在某负载时最大输出功率 x 通道数量： | 80mW x 2 @ 16 欧姆 |
| 电源电压： | 1.8 V ~ 3.6 V |
| 特点： | 消除爆音，短路保护和热保护，关闭 |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 20-TQFN-EP（4x4） |
| 封装/外壳： | 20-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
MAX4409
80mW, DirectDrive, Stereo Headphone
Amplifier with Common-Mode Sense
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VPVDD = VSVDD = 3V, VPGND = VSGND = 0, SHDN = SVDD, C1 = C2 = 2.2F, RIN = RF = R1 = R2 = 10k
Ω, RL = ∞, TA = TMIN to
TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PGND to SGND .....................................................-0.3V to +0.3V
PVDD to SVDD .................................................................-0.3V to +0.3V
PVSS to SVSS .........................................................-0.3V to +0.3V
PVDD and SVDD to PGND or SGND .........................-0.3V to +4V
PVSS and SVSS to PGND or SGND ..........................-4V to +0.3V
IN_ and COM to SGND.................................SVSS to (SVDD - 1V)
IN_ to COM .....................................(COM + 2V) to (COM - 0.3V)
SHDN_ to SGND........................(SGND - 0.3V) to (SVDD + 0.3V)
OUT_ to SGND ............................(SVSS - 0.3V) to (SVDD + 0.3V)
C1P to PGND.............................(PGND - 0.3V) to (PVDD + 0.3V)
C1N to PGND .............................(PVSS - 0.3V) to (PGND + 0.3V)
Output Short Circuit to GND or VDD...........................Continuous
Thermal Limits (Note 1)
Continuous Power Dissipation (TA = +70°C)
20-Pin Thin QFN Multilayer (derate 25.6mW/°C
above +70°C)..........................................................2051mW
θJA................................................................................39°C/W
θJC...............................................................................5.7°C/W
Junction Temperature ......................................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage Range
VDD
Guaranteed by PSRR test
1.8
3.6
V
Quiescent Supply Current
IDD
5
8.4
mA
Shutdown Supply Current
ISHDN
SHDN = GND
6
10
A
VIH
0.7 x
SVDD
SHDN Thresholds
VIL
0.3 x
SVDD
V
SHDN Input Leakage Current
-1
+1
A
SHDN to Full Operation
tSON
175
s
CHARGE PUMP
Oscillator Frequency
fOSC
272
320
368
kHz
AMPLIFIERS
Input Offset Voltage
VOS
RL = 32
Ω
0.5
2.4
mV
Input Bias Current
IBIAS
-700
-100
0
nA
COM Bias Current
ICOM
-1400
-200
0
nA
Equivalent Input Offset Current
IOS
IOS = (IBIAS(INR) + IBIAS(INL) - ICOM) / 2
±2
nA
COM Input Range
VCOM
Inferred from CMRR test
-500
+500
mV
Common-Mode Rejection Ratio
CMRR
-500mV
≤ VCOM ≤ +500mV, RSOURCE ≤ 10Ω
75
96
dB
1.8V
≤ VDD ≤ 3.6V
DC (Note 3)
75
86
fRIPPLE = 1kHz
76
Power-Supply Rejection Ratio
PSRR
VDD = 3.0V,
200mVP-P ripple (Note 4)
fRIPPLE = 20kHz
48
dB
RL = 32
Ω
65
Output Power
POUT
THD+N = 1%, TA = +25°C
RL = 16
Ω
55
80
mW
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a 4-layer
board. For detailed information on package thermal considerations see www.maxim-ic.com/thermal-tutorial.
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