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| 型号： | MAX44268EWL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/15页 |
| 文件大小： | 0K |
| 描述： | IC COMPARATOR W/REF DUAL 9WLP |
| 产品培训模块： | Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 类型： | 通用 |
| 元件数： | 2 |
| 输出类型： | 开路漏极 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电压 - 输入偏移（最小值）： | 5mV @ 5V |
| 电流 - 输入偏压（最小值）： | 0.15nA |
| 电流 - 输出（标准）： | 50mA |
| 电流 - 静态（最大值）： | 1.15µA |
| CMRR, PSRR（标准）： | 80dB PSRR |
| 传输延迟（最大）： | 39µs |
| 磁滞： | 6mV |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 9-WFBGA，WLBGA |
| 安装类型： | 表面贴装 |
| 包装： | 带卷 (TR) |
Maxim Integrated Products 12
MAX44268
1.3mm x 1.3mm, Low-Power
Dual Comparator with Reference
(RTHEVENIN) in series with the capacitor C1. tHIGH can
then be computed using the basic time domain equa-
tions for the charging RC circuit as:
T_RISE
THEVENIN
HIGH
THEVENIN
T_FALL
THEVENIN
V- V
R
C1 ln
t
V- V
=
[
]
[
]
THEVENIN
CC
THEVENIN
R
(R2 R4) R3 R1 R5
V
(R2 R4) R3
V
x R4
V
(R2 R4) R3 R1
R2 R4
R1
x
(R2 R4) R3 R1
=
++
+
=
+
++
+
++
The tHIGH calculation can be simplified by selecting the
component values in such a way that R3 >> R1 and R5
>> R1. This ensures that the output of the comparator
goes close to VCC when at logic-high (that is, VTHEVENIN
~ VCC and RTHEVENIN ~ R5). With this selection, tHIGH
can be approximated as:
T_RISE
CC
HIGH
T_FALL
CC
V
- V
R5C1 ln
t
V
- V
=
The frequency of the relaxation oscillator is:
(
)
(
)
HIGH
LOW
CC
T_RISE
T_FALL
T_RISE
T_FALL
CC
11
f
V
-V
tt
V
R5C11n
V
-
V
=
+
Window Detector Circuit
The IC is ideal for window detectors (undervoltage/over-
voltage detectors). Typical Application Circuit shows a
simple window detector circuit. By changing the values
of R1, R2, and R3 different voltage threshold values can
be chosen. For this example, assume a single-cell Li+
battery with a 2.9V end-of-life charge, a peak charge of
4.2V, and a nominal value of 3.6V. OUTA provides an
active-low undervoltage indication, and OUTB provides
an active-low overvoltage indication. The open-drain out-
puts of both the comparators are wired ORed to give an
active-high power-good signal.
The design procedure is as follows:
1) Select R1. The input bias current into INB- is less than
15nA, so the current through R1 should exceed 1.5A
for the thresholds to be accurate. In this example,
choose R1 = 825kI (1.236V/1.5A).
2) Calculate R2 + R3. The overvoltage threshold should
be 4.2V when VIN is rising. The design equation is as
follows:
OTH
REF
V
R2 R3 R1 x
- 1
V
4.2
825 x
- 1
1.236
= 1969k
+
=
=
3) Calculate R2. The undervoltage threshold should be
2.9V when VIN is falling. The design equation is as
follows:
(
) (
)
(
)
REF
UTH
V
R2 (R1 R2 R3)x
- R1
V
825
1969 x 1.236/2.9 - 825
370k
=
++
=
+
=
For this example, choose a 374kI standard value 1%
resistor.
4) Calculate R3:
R3 (R2 R3) - R2
1969k - 374k
=1.595M
=
+
=
For this example, choose a 1.58MI standard value 1%
resistor.
Figure 7. Relaxation Oscillator Waveforms
VT_RISE
C1 WAVEFORM
OUT
WAVEFORM
VT_FALL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX44269EWL+ | 制造商:Maxim Integrated Products 功能描述: |
| MAX44269EWL+T | 功能描述:校验器 IC Dual Comparator RoHS:否 制造商:STMicroelectronics 产品: 比较器类型: 通道数量: 输出类型:Push-Pull 电源电压-最大:5.5 V 电源电压-最小:1.1 V 补偿电压（最大值）:6 mV 电源电流（最大值）:1350 nA 响应时间: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SC-70-5 封装:Reel |
| MAX4426C/D | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX4426C/D DIE | 制造商:Maxim Integrated Products 功能描述: |
| MAX4426C/D+ | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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