
MAX4704
Low-Voltage, 60
Ω,
4:1 Analog Multiplexer in QFN
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—Single +3V Supply
(V+ = +2.7V to +3.3V, VIH = +1.4V, VIL = +0.5V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at V+ = +3V and
TA = +25°C.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Signals on INH, ADD_, NO_, and COM exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
(Voltages Referenced to GND)
V+ .............................................................................-0.3V to +6V
All Other Pins (Note 1)................................ -0.3V to (V+ + 0.3V)
Continuous Current COM, NO_ ........................................±20mA
Peak Current COM, NO_
(pulsed at 1ms, 10% duty cycle)..................................±40mA
ESD per Method 3015.7.......................................................>2kV
Continuous Power Dissipation (TA = +70°C)
10-Pin MAX (derate 4.7mW/°C above +70°C) ......... 330mW
12-Pin QFN (derate 11.9mW/°C above +70°C) ......... 952mW
Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
PARAMETER
SYMBOL
CONDITIONS
TA
MIN
TYP
MAX
UNITS
ANALOG SWITCH
Analog Signal Range
VCOM, VNO_
0
V+
V
+25
°C50
60
On-Resistance
RON
V+ = +2.7V, ICOM = 5mA,
VNO_ = +1.3V
TMIN to TMAX
70
Ω
+25
°C1
3
On-Resistance Match
Between Channels (Note 4)
ΔRON
V+ = +2.7V, ICOM = 5mA,
VNO_ = +1.3V
TMIN to TMAX
5
Ω
+25
°C3
5
On-Resistance Flatness
(Note 5)
RFLAT (ON)
V+ = +2.7V, ICOM = 5mA,
VNO_ = +1V, +1.3V, +1.8V
TMIN to TMAX
10
Ω
+25
°C
-0.1
±0.01
0.1
NO_ Off-Leakage
Current (Note 6)
INO_(OFF)
V+ = +3.3V, VCOM = +0.3V, +3V
VNO_ = +3V, +0.3V
TMIN to TMAX
-1
1
nA
+25
°C
-0.5
±0.01
0.5
COM On-Leakage Current
(Note 6)
ICOM(ON)
V+ = +3.3V, VCOM = +0.3V, +3V
VNO_ = +0.3V, +3V, or floating
TMIN to TMAX
-5
5
nA
+25
°C
-0.5
±0.01
0.5
COM Off-Leakage Current
(Note 6)
ICOM(OFF)
V+ = +3.3V, VCOM = +0.3V, +3V
VNO_ = +3V, +0.3V
TMIN to TMAX
-5
5
nA
DYNAMIC
+25
°C20
60
Address Transition Time
tTRANS
VNO_ = +1.5V, RL = 300
Ω,
CL = 35pF, Figure 2
TMIN to TMAX
70
ns
+25
°C25
60
Inhibit Turn-On Time
tON
VNO_ = +1.5V, RL = 300
Ω,
CL = 35pF, Figure 3
TMIN to TMAX
70
ns
+25
°C10
20
Inhibit Turn-Off Time
tOFF
VNO_ = +1.5V, RL = 300
Ω,
CL = 35pF, Figure 3
TMIN to TMAX
30
ns
+25
°C20
Break-Before-Make Time
(Note 7)
tBBM
VNO_ = +1.5V, RL = 300
Ω,
CL = 35pF, Figure 4
TMIN to TMAX
2
ns
Charge Injection
Q
VGEN = 0, RGEN = 0, CL = 1.0nF,
Figure 5
2pC