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参数资料
| 型号： | MAX4940BETN+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC DGTL PULSER HI-VOLT 56TQFN |
| 标准包装： | 37 |
| 应用： | 医疗用超声波成像，声纳 |
| 电源电压： | 2.37 V ~ 6 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Dual/Quad, Unipolar/Bipolar,
High-Voltage Digital Pulsers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V DD Logic Supply Voltage ......................................-0.3V to +6V
V CC Output Driver Positive Supply Voltage ..........-0.3V to +15V
V EE Output Driver Negative Supply Voltage ........-15V to +0.3V
V PP_ High-Positive Supply Voltage ........-0.3V to (V NN_ + 220V)
V NN_ Low-Negative Supply Voltage ...................-220V to +0.3V
V PP1 - V NN1 , V PP2 - V NN2 Supply Voltage .........-0.6V to +250V
INP_, INN_, CLP_, EN Logic Input ........... -0.3V to (V DD + 0.3V)
C GN_ Voltage ......................... (-0.3V + V NN_ ) to (+15V + V NN_ )
C GP_ Voltage ............................(+0.3V + V PP_ ) to (-15V + V PP_ )
C DP_ , C DN_ Voltage ................................................-0.3V to V CC
Continuous Power Dissipation (T A = +70 N C)
56-Pin TQFN (derate 47.6mW/ N C above +70 N C) .......3809mW
Thermal Resistance (Note 1)
B JA ................................................................................21 N C/W
B JC .................................................................................1 N C/W
Operating Temperature Range ............................. 0 N C to +70 N C
Junction Temperature .....................................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Lead Temperature (soldering, 10s) ................................+300 N C
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = +3V, V CC = +12V, V EE = -12V, V PP_ = +100V, V NN_ = -100V, T A = T MIN to T MAX , unless otherwise noted. Typical values are
at T A = +25 N C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY (V DD , V CC , V EE , V PP_ , V NN_ )
Logic Supply Voltage
Positive Drive Supply Voltage
Negative Drive Supply Voltage
High-Side Supply Voltage
Low-Side Supply Voltage
High-Side Supply Voltage
Low-Side Supply Voltage
V PP_ - V NN_ Supply Voltage
V DD
V CC
V EE
V PP1
V NN1
V PP2
V NN2
2.37
4.75
1.05 x
(-V CC )
0
-200
0
V NN1
0
3
12
-V CC
6
12.6
0.95 x
(-V CC )
+200
0
V PP1
0
+200
V
V
V
V
V
V
V
V
SUPPLY CURRENT (for single channel)
V INN_ /V INP_ /V CLP_ = 0 or V DD , V EN = 0
1
F A
V DD Supply Current
I DD
V EN = V DD , V CLP_ = 0 or V DD , V INN_ =
V INP_ , f = 5MHz, one channel switching
100
200
F A
V EN = 0 (static)
V EN = V DD (static)
V EN = V DD , V CLP_ = 0 or V DD , V INN_ =
1
10
F A
V CC Supply Current
I CC_
V INP_ , f = 5MHz, V CC = +12V, V DD = +3V,
one channel switching
V EN = V DD , V CLP_ = 0 or V DD , V INN_ =
36
mA
V INP_ , f = 5MHz, V CC = +5V, V DD = +3V,
one channel switching
15
2
______________________________________________________________________________________
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