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| 型号： | MAX5054BATA+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 8-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 差分 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN-EP（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1411 (CN2011-ZH PDF) |
| 其它名称： | MAX5054BATA+TDKR |
4A, 20ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to GND.)
V DD ...............................................................................-0.3V to +18V
INA+, INA-, INB+, INB- ...............................................-0.3V to +18V
OUTA, OUTB...................................................-0.3V to (V DD + 0.3V)
OUTA, OUTB Short-Circuit Duration ........................................10ms
Continuous Source/Sink Current at OUT_ (P D < P DMAX ) .....200mA
Continuous Power Dissipation (T A = +70°C)
8-Pin SO-EP (derate 19.2mW/°C above +70°C)… ........1538mW
8-Pin SO (derate 5.9mW/°C above +70°C)… ..................471mW
Operating Temperature Range..............................-40°C to +125°C
Storage Temperature Range .................................-65°C to +150°C
Junction Temperature ...........................................................+150°C
Lead Temperature (soldering, 10s)......................................+300°C
Soldering Temperature (reflow)............................................+260°C
8-Pin TDFN-EP (derate 18.2mW/°C above +70°C)........1454mW
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
8 TDFN-EP
Junction-to-Ambient Thermal Resistance ( θ JA )...............+41°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................+8°C/W
8 SO-EP
Junction-to-Ambient Thermal Resistance ( θ JA )..................+41°C/W
Junction-to-Case Thermal Resistance ( θ JC )......................+7°C/W
8 SO
Junction-to-Ambient Thermal Resistance ( θ JA )................+132°C/W
Junction-to-Case Thermal Resistance ( θ JC ).......................+40°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V DD = 4V to 15V, T A = -40°C to +125°C, unless otherwise noted. Typical values are at V DD = 15V and T A = +25 ° C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
POWER SUPPLY
V DD Operating Range
V DD
4
15
V
V DD Undervoltage Lockout
UVLO
V DD rising
3.00
3.50
3.85
V
V DD Undervoltage Lockout
Hysteresis
200
mV
V DD Undervoltage Lockout to
Output Delay
V DD rising
12
μs
I DD
INA- = INB- = V DD ,
INA+ = INB+ = 0V
(not switching)
V DD = 4V
V DD = 15V
28
40
55
75
μA
V DD Supply Current
INA- = 0V, INB+ = V DD = 15V,
I DD-SW
INA+ = INB- both channels switching at
1
2.4
4
mA
250kHz, C L = 0F
DRIVER OUTPUT (SINK)
V DD = 15V,
T A = +25°C
1.1
1.8
Driver Output Resistance Pulling
Down
R ON-N
I OUT_ = -100mA
V DD = 4.5V,
T A = +125°C
T A = +25°C
1.5
2.2
2.4
3.3
?
I OUT_ = -100mA
T A = +125°C
3.0
4.5
Peak Output Current (Sinking)
I PK-N
V DD = 15V, C L = 10,000pF
4
A
Output-Voltage Low
I OUT_ = -100mA
V DD = 4.5V
V DD = 15V
0.45
0.24
V
Latchup Protection
I LUP
Reverse current I OUT_ (Note 2)
400
mA
2
_______________________________________________________________________________________
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