- 您现在的位置：买卖IC网 > PDF目录17248 > MAX5054BATA+T (Maxim Integrated Products)IC MOSFET DRIVER DUAL 8-TDFN PDF资料下载
参数资料
| 型号： | MAX5054BATA+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 9/15页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 8-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 差分 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4 V ~ 15 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN-EP（3x3） |
| 包装： | 标准包装 |
| 产品目录页面： | 1411 (CN2011-ZH PDF) |
| 其它名称： | MAX5054BATA+TDKR |
4A, 20ns, Dual MOSFET Drivers
IN_+
V IL
V IH
90%
MAX5055
MAX5056
V DD
OUT_
10%
MAX5057
BREAK-
P
t D-OFF1
t F
t D-ON1
t R
IN_+
BEFORE-
MAKE
CONTROL
OUT_
IN_-
V IH
t D-OFF2
V IL
t D-ON2
N
GND
RISING MISMATCH = t D-ON2 - t D-ON1
FALLING MISMATCH = t D-OFF2 - t D-OFF1
Figure 1. Timing Diagram
V DD
NONINVERTING INPUT DRIVER
MAX5055
MAX5056
V DD
MAX5054
MAX5057
BREAK-
P
IN_-
BREAK-
BEFORE-
MAKE
P
OUT_
IN_-
BEFORE-
MAKE
CONTROL
N
OUT_
CONTROL
IN_+
N
GND
INVERTING INPUT DRIVER
GND
Figure 2. MAX5054 Block Diagram (1 Driver)
Detailed Description
V DD Undervoltage Lockout (UVLO)
The MAX5054–MAX5057 have internal undervoltage
lockout for V DD . When V DD is below the UVLO thresh-
old, OUT_ is low, independent of the state of the inputs.
The undervoltage lockout is typically 3.5V with 200mV
typical hysteresis to avoid chattering. When V DD rises
above the UVLO threshold, the outputs go high or low
depending upon the logic-input levels. Bypass V DD
using low-ESR ceramic capacitors for proper operation
(see the Applications Information section).
Figure 3. MAX5055/MAX5056/MAX5057 Functional Diagrams
(1 Driver)
Logic Inputs
The MAX5054B–MAX5057 have TTL-compatible logic
inputs, while the MAX5054A is a CMOS logic-input dri-
ver. The logic-input signals can be independent of the
V DD voltage. For example, the device can be powered
by a 5V supply while the logic inputs are provided from
CMOS logic. Also, the logic inputs are protected against
the voltage spikes up to 18V, regardless of the V DD volt-
age. The TTL and CMOS logic inputs have 300mV and
0.1 x V DD hysteresis, respectively, to avoid possible dou-
ble pulsing during transition. The low 2.5pF input capaci-
tance reduces loading and increases switching speed.
_______________________________________________________________________________________
9
相关PDF资料 |
PDF描述 |
|---|---|
| GCM06DRYI | CONN EDGECARD 12POS DIP .156 SLD |
| GMM06DRXN | CONN EDGECARD 12POS DIP .156 SLD |
| GMM06DRXH | CONN EDGECARD 12POS DIP .156 SLD |
| GEM18DRTS | CONN EDGECARD 36POS DIP .156 SLD |
| F910J157KCC | CAP TANT 150UF 6.3V 10% 2312 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5055 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:4A, 20ns, Dual MOSFET Drivers |
| MAX5055AASA | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055AASA+ | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055AASA+T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5055AASA-T | 功能描述:功率驱动器IC 4A 20ns Dual MOSFET Drivers RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。