- 您现在的位置：买卖IC网 > Datasheet目录341 > MAX5062AASA+ (Maxim Integrated Products)IC DRIVER HALF BRDG HS 8-SOIC Datasheet资料下载
参数资料
| 型号： | MAX5062AASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/20页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRDG HS 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1411 (CN2011-ZH PDF) |
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
V DD
V IN
A)
EXTERNAL
C)
PWM IN
PWM IN
BBM DELAY
INH
DH
N
V OUT
HS
INL
DL
N
EXTERNAL
BBM DELAY
t DMIN-DH-L
DH
MAX5062B/MAX5062D/MAX5063B/MAX5063D/MAX5064
V DD
V IN
B)
POTENTIAL
EXTERNAL
OVERLAP TIME
PWM IN
BBM DELAY
INH
DH
N
V OUT
HS
DL
INL
DL
N
t DMIN-DL-H
MAX5062A/MAX5062C/MAX5063A/MAX5063C/MAX5064
Figure 3. Minimum Pulse-Width Behavior for High Duty-Cycle Input (Off-Time < t PW-MIN )
P D = ?? C L DD SW ?? + ( I DDO BSTO DD
) × V
× V
× f
+ I
Applications Information
Supply Bypassing and Grounding
Pay extra attention to bypassing and grounding the
MAX5062/MAX5063/MAX5064. Peak supply and output
currents may exceed 4A when both drivers are driving
large external capacitive loads in-phase. Supply drops
and ground shifts create forms of negative feedback for
inverters and may degrade the delay and transition
times. Ground shifts due to insufficient device ground-
ing may also disturb other circuits sharing the same AC
ground return path. Any series inductance in the V DD ,
DH, DL, and/or GND paths can cause oscillations due
to the very high di/dt when switching the MAX5062/
MAX5063/MAX5064 with any capacitive load. Place
one or more 0.1μF ceramic capacitors in parallel as
close to the device as possible to bypass V DD to GND
(MAX5062/MAX5063) or PGND (MAX5064). Use a
ground plane to minimize ground return resistance and
series inductance. Place the external MOSFET as close
as possible to the MAX5062/MAX5063/MAX5064 to fur-
ther minimize board inductance and AC path resis-
tance. For the MAX5064_ the low-power logic ground
(AGND) is separated from the high-power driver return
(PGND). Apply the logic-input signal between IN_ to
AGND and connect the load (MOSFET gate) between
DL and PGND.
Power Dissipation
Power dissipation in the MAX5062/MAX5063/MAX5064
is primarily due to power loss in the internal boost
diode and the nMOS and pMOS FETS.
For capacitive loads, the total power dissipation for the
device is:
2
12
______________________________________________________________________________________
相关PDF资料 |
PDF描述 |
|---|---|
| MAX5075AAUA | IC DRVR FET P-P 8-UMAX |
| MAX5077AUD+ | IC DRVR FET P-P 14-TSSOP |
| MAX5078BATT+T | IC MOSFET DRIVER 6-TDFN |
| MAX5092EVKIT+ | KIT EVALUATION FOR MAX5092 |
| MAX620EWN | IC DVR QUAD HISIDE MOSFET 18SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5062AASA+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062AASA+T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062AASA-T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062BASA | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062BASA+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。