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| 型号： | MAX5062AASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/20页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER HALF BRDG HS 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 30ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1411 (CN2011-ZH PDF) |
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V DD = V BST = +8V to +12.6V, V HS = GND = 0V, BBM = open, T A = -40°C to +125°C, unless otherwise noted. Typical values are at
V DD = V BST = +12V and T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V DD = V BST = +12V)
C L = 1000pF
7
Rise Time
t R
C L = 5000pF
33
ns
C L = 10,000pF
C L = 1000pF
65
7
Fall Time
t F
C L = 5000pF
33
ns
C L = 10,000pF
65
Turn-On Propagation Delay Time
Turn-Off Propagation Delay Time
t D_ON
t D_OFF
Figure 1, C L = 1000pF
(Note 3)
Figure 1, C L = 1000pF
(Note 3)
CMOS
TTL
CMOS
TTL
30
35
30
35
55
63
55
63
ns
ns
Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output
Delay Matching Between Driver-
Low and Driver-High
t MATCH1
t MATCH2
C L = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
C L = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
2
2
8
8
ns
ns
Break-Before-Make Accuracy
(MAX5064 Only)
R BBM = 10k ?
R BBM = 47k ? (Notes 3, 4)
R BBM = 100k ?
40
16
56
95
72
ns
Internal Nonoverlap
1
ns
Minimum Pulse-Width Input Logic
(High or Low) (Note 5)
t PW-MIN
V DD = V BST = 12V
V DD = V BST = 8V
135
170
ns
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
All devices are 100% tested at T A = +125°C. Limits over temperature are guaranteed by design.
Ensure that the V DD -to-GND or BST-to-HS voltage does not exceed 13.2V.
Guaranteed by design, not production tested.
Break-before-make time is calculated by t BBM = 8ns x (1 + R BBM / 10k ? ).
See the Minimum Pulse Width section.
4
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相关代理商/技术参数 |
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|---|---|
| MAX5062AASA+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062AASA+T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062AASA-T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062BASA | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5062BASA+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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