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参数资料
| 型号： | MAX5063DASA+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 配置： | 半桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 125V |
| 电源电压： | 8 V ~ 12.6 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOICN 裸露焊盘 |
| 包装： | 管件 |
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V DD = V BST = +8V to +12.6V, V HS = GND = 0V, BBM = open, T A = -40°C to +125°C, unless otherwise noted. Typical values are at
V DD = V BST = +12V and T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V IN_H+ , V IN_L+ = 0V
Logic-Input Current
I_IN
V IN_L = V DD for MAX5062B/D, MAX5063B/D
V IN_H- , V IN_L- , V IN_H = V DD
-1
0.001
+1
μA
V IN_L = 0V for MAX5062A/C, MAX5063A/C
IN_H+, IN_L+ IN_H, to GND
IN_L to V DD for MAX5062B/D,
Input Resistance
R IN
MAX5063B/D
1
M ?
IN_H-, IN_L-, IN_H, to V DD
IN_L for MAX5062A/C, MAX5063A/C to GND
Input Capacitance
C IN
2.5
pF
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
BST Maximum Voltage
V HS_MAX
V BST_MAX
125
140
V
V
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
R ON_HP
R ON_HN
V DD = 12V, I DH = 100mA
(sourcing)
V DD = 12V, I DH = 100mA
(sinking)
T A = +25°C
T A = +125°C
T A = +25°C
T A = +125°C
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
?
?
DH Reverse Current (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V BST = 0V or floating, I DH = 1mA (sinking)
0.94
1.16
V
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
I DH_PEAK
C L = 10nF, V DH = 0V
C L = 10nF, V DH = 12V
2
2
A
A
LOW-SIDE GATE DRIVER
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
R ON_LP
R ON_LN
V DD = 12V, I DL = 100mA
(sourcing)
V DD = 12V, I DL = 100mA
(sinking)
T A = +25°C
T A = +125°C
T A = +25°C
T A = +125°C
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
?
?
Reverse Current at DL (Latchup
Protection)
(Note 3)
400
mA
Power-Off Pulldown Clamp
Voltage
V DD = 0V or floating, I DL = 1mA (sinking)
0.95
1.16
V
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
I PK_LP
I PK_LN
C L = 10nF, V DL = 0V
C L = 10nF, V DL = 12V
2
2
A
A
INTERNAL BOOTSTRAP DIODE
Forward Voltage Drop
Turn-On and Turn-Off Time
V f
t R
I BST = 100mA
I BST = 100mA
0.91
40
1.11
V
ns
_______________________________________________________________________________________
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX5063DASA+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5063DASA+T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5063DASA-T | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5064AATC | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX5064AATC+ | 功能描述:功率驱动器IC 125V 2A Half-Bridge MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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