参数资料
型号: MAX5091BATA+T
厂商: Maxim Integrated
文件页数: 2/15页
文件大小: 0K
描述: IC REG LDO 3.3V .1A 8-TDFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 5 V ~ 28 V
电压 - 压降(标准): 0.3V @ 100mA
稳压器数量: 1
电流 - 输出: 100mA
电流 - 限制(最小): 160mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-TDFN-EP(3x3)
包装: 标准包装
产品目录页面: 1411 (CN2011-ZH PDF)
其它名称: MAX5091BATA+TDKR
28V, 100mA, Low-Quiescent-Current LDO
with Reset and Power-Fail Input/Output
ABSOLUTE MAXIMUM RATINGS
V S to GND ..............................................................-0.3V to +28V
V S to GND (t ≤ 1s) ..................................................-0.3V to +40V
V OUT to GND ..........................................................-0.3V to +20V
V S to OUT ...............................................................-0.3V to +28V
RES , SO to GND.....................................................-0.3V to +20V
RES , SO Output Sink Current................................................5mA
V OUT Short Circuit (V S ≤ 16V)………… ......................Continuous
EN, SI to GND.........................................................-0.3V to +12V
CT to GND.............................-0.3V to the lower of V OUT or +12V
Continuous Power Dissipation (T A = +70°C)
8-Pin SO-EP (derate 19.2mW/°C above +70°C) .........1538mW*
Thermal Resistance ( θ JA )................................................52°C/W
Thermal Resistance ( θ JC )..................................................6°C/W
8-Pin TDFN-EP (derate 24.4mW/°C above +70°C).....1951mW**
Thermal Resistance ( θ JA )................................................41°C/W
Thermal Resistance ( θ JC )...............................................8.3°C/W
Operating Junction Temperature Range ...........-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*As per JEDEC51 Standard (single-layer board).
**As per JEDEC51 Standard (multilayer board).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS (MAX5091A)
(V S = +14V, V OUT = 5V, EN unconnected, T A = T J = -40°C to +125°C, C IN = 10μF, C OUT = 10μF, unless otherwise noted. Typical
specifications are at T A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
T A = +25°C, I OUT = 1mA
5.6V ≤ V S ≤ 28V, I OUT = 1mA to 50mA (Note 2)
4.95
4.90
5
5
5.05
5.10
Output Voltage
V OUT
5.6V ≤ V S ≤ 40V, t ≤ 1s, I OUT = 1mA to 30mA
(Note 2)
4.9
5
5.1
V
V S = +8V, I OUT = 1mA to 100mA
I OUT = 10mA
4.9
5
0.1
5.1
0.25
Dropout Voltage
V DP
V S = +4.75V
I OUT = 50mA
0.2
0.4
V
I OUT = 100mA
0.3
0.5
V S to V OUT Difference in
Undervoltage
V IO
V S = +4V, I OUT = 35mA
0.4
V
Line Regulation
Load Regulation
Current Limit
Quiescent Current
Shutdown Supply Current
Thermal-Shutdown
Temperature
Thermal-Shutdown
Hysteresis
V OL
V OLO
I LIM
I Q
I SHDN
T J(SHDN)
Δ T J(SHDN)
+5.5V ≤ V S ≤ +28V, I OUT = 1mA
1mA ≤ I OUT ≤ 100mA
I OUT = 100μA
I OUT = 300μA
I OUT = 100mA
V EN ≤ +0.4V
Temperature rising
160
0.6
17
260
46
45
4.5
17
+165
20
5
50
400
100
100
10
30
mV
mV
mA
μA
mA
μA
°C
°C
2
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