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参数资料
| 型号： | MAX5525ETC+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 12/23页 |
| 文件大小： | 0K |
| 描述： | IC DAC 10BIT DUAL ULP 12-TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 设置时间： | 660µs |
| 位数： | 10 |
| 数据接口： | MICROWIRE?，QSPI?，串行，SPI? |
| 转换器数目： | 2 |
| 电压电源： | 单电源 |
| 功率耗散（最大）： | 1.35W |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 12-WQFN 裸露焊盘 |
| 供应商设备封装： | 12-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
| 输出数目和类型： | 2 电压，单极；2 电压，双极 |
| 采样率（每秒）： | * |
MAX5522–MAX5525
Dual, Ultra-Low-Power,
10-Bit, Voltage-Output DACs
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD = +1.8V to +5.5V, OUT_ unloaded, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDD to GND ..............................................................-0.3V to +6V
OUTA, OUTB to GND .................................-0.3V to (VDD + 0.3V)
FBA, FBB to GND .......................................-0.3V to (VDD + 0.3V)
SCLK, DIN, CS to GND ..............................-0.3V to (VDD + 0.3V)
REFIN, REFOUT to GND ............................-0.3V to (VDD + 0.3V)
Continuous Power Dissipation (TA = +70°C)
12-Pin Thin QFN (derate 16.9mW/°C above +70°C).....1349mW
8-Pin MAX (derate 5.9mW/°C above +70°C) .............471mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
STATIC ACCURACY (MAX5522/MAX5524 EXTERNAL REFERENCE)
Resolution
N
10
Bits
VDD = 5V, VREF = 4.096V
±1
±4
Integral Nonlinearity (Note 1)
INL
VDD = 1.8V, VREF = 1.024V
±1
±4
LSB
Guaranteed monotonic, VDD = 5V,
VREF = 4.096V
±0.2
±1
Differential Nonlinearity (Note 1)
DNL
Guaranteed monotonic, VDD = 1.8V,
VREF = 1.024V
±0.2
±1
LSB
VDD = 5V, VREF = 4.096V
±1
±20
Offset Error (Note 2)
VOS
VDD = 1.8V, VREF = 1.024V
±1
±20
mV
Offset-Error Temperature Drift
±2
V/
°C
VDD = 5V, VREF = 4.096V
±0.5
±2
Gain Error (Note 3)
GE
VDD = 1.8V, VREF = 1.024V
±0.5
±2
LSB
Gain-Error Temperature
Coefficient
±4
ppm/
°C
Power-Supply Rejection Ratio
PSRR
1.8V
≤ VDD ≤ 5.5V
85
dB
STATIC ACCURACY (MAX5523/MAX5525 INTERNAL REFERENCE)
Resolution
N
10
Bits
VDD = 5V, VREF = 3.9V
±1
±4
Integral Nonlinearity (Note 1)
INL
VDD = 1.8V, VREF = 1.2V
±1
±4
LSB
Guaranteed monotonic, VDD = 5V,
VREF = 3.9V
±0.2
±1
Differential Nonlinearity (Note 1)
DNL
Guaranteed monotonic, VDD = 1.8V,
VREF = 1.2V
±0.2
±1
LSB
VDD = 5V, VREF = 3.9V
±1
±20
Offset Error (Note 2)
VOS
VDD = 1.8V, VREF = 1.2V
±1
±20
mV
Offset-Error Temperature Drift
±2
V/
°C
VDD = 5V, VREF = 3.9V
±0.5
±2
Gain Error (Note 3)
GE
VDD = 1.8V, VREF = 1.2V
±0.5
±2
LSB
Gain-Error Temperature
Coefficient
±4
ppm/
°C
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