参数资料
型号: MAX5816ATB+T
厂商: Maxim Integrated Products
文件页数: 12/32页
文件大小: 0K
描述: IC DAC 12BIT SRL 4CH 10TDFN
产品培训模块: Obsolescence Mitigation Program
标准包装: 2,500
设置时间: 4.5µs
位数: 12
数据接口: I²C,串行
转换器数目: 4
电压电源: 单电源
功率耗散(最大): 1.95W
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 10-WFDFN 裸露焊盘
供应商设备封装: 10-TDFN-EP(3x3)
包装: 带卷 (TR)
输出数目和类型: 4 电压,单极
Ultra-Small, Quad-Channel, 12-Bit Buffered Output DAC
with Internal Reference and I2C Interface
MAX5816
Maxim Integrated Products 2
VDD to GND.............................................................-0.3V to +6V
OUT_, REF to GND....0.3V to the lower of (VDD + 0.3V) and +6V
SCL, SDA to GND ...................................................-0.3V to +6V
ADDR to GND ........-0.3V to the lower of (VDD + 0.3V) and +6V
Continuous Power Dissipation (TA = +70NC)
TDFN (derate at 24.4mW/NC above 70NC) .............1951.2mW
Maximum Continuous Current into Any Pin .................... Q50mA
Operating Temperature.................................... -40NC to +125NC
Storage Temperature ....................................... -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) .................................... +260NC
TDFN
Junction-to-Ambient Thermal Resistance (θJA) .........41NC/W
Junction-to-Case Thermal Resistance (θJC) .................9NC/W
ABSOLUTE MAXIMUM RATINGS
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
ELECTRICAL CHARACTERISTICS
(VDD = 2.7V to 5.5V, VGND = 0V, CL = 200pF, RL = 2kI, TA = -40NC to +125NC, unless otherwise noted. Typical values are at
TA = +25NC.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DC PERFORMANCE (Note 3)
Resolution and Monotonicity
N
12
Bits
Integral Nonlinearity (Note 4)
INL
-1
Q
0. 5
+1
LSB
Differential Nonlinearity (Note 4)
DNL
-1
Q
0.2
+1
LSB
Offset Error (Note 5)
OE
-5
Q
0.5
+5
mV
Offset Error Drift
Q
10
F
V/NC
Gain Error (Note 5)
GE
-1.0
Q
0.1
+1.0
%FS
Gain Temperature Coefficient
With respect to VREF
Q
3.0
ppm of
FS/NC
Zero-Scale Error
0
10
mV
Full-Scale Error
With respect to VREF
-0.5
+0.5
%FS
DAC OUTPUT CHARACTERISTICS
Output Voltage Range (Note 6)
No load
0
VDD
V
2kI load to GND
0
VDD -
0.2
2kI load to VDD
0.2
VDD
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