参数资料
型号: MAX6870ETJ+
厂商: Maxim Integrated Products
文件页数: 9/51页
文件大小: 0K
描述: IC SEQUENCE/SUPERVISOR 32TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 43
类型: 序列发生器
监视电压数目: 6
输出: 开路漏极,推挽式
复位: 高有效/低有效
复位超时: 可调节/可选择
电压 - 阀值: 8 种可选阀值组合
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 32-WQFN 裸露焊盘
供应商设备封装: 32-TQFN-EP(7x7)
包装: 管件
EEPROM-Programmable Hex/Quad
Power-Supply Sequencers/Supervisors with ADC
Pin Description (continued)
PIN
MAX6870 MAX6871
NAME
FUNCTION
17
18
19
20
17
18
19
20
GPI4
GPI3
GPI2
GPI1
General-Purpose Logic Input 4. An internal 10μA current source pulls GPI4 to GND. Configure
GPI4 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 3. An internal 10μA current source pulls GPI3 to GND. Configure
GPI3 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 2. An internal 10μA current source pulls GPI2 to GND. Configure
GPI2 to control watchdog timer functions or the programmable outputs.
General-Purpose Logic Input 1. An internal 10μA current source pulls GPI1 to GND. Configure
GPI1 to control watchdog timer functions or the programmable outputs.
Internal Power-Supply Output. Bypass ABP to GND with a 1μF ceramic capacitor. ABP powers
21
21
ABP
the internal circuitry of the MAX6870/MAX6871. ABP supplies the input voltage to the internal
charge pumps when the programmable outputs are configured as charge-pump outputs. Do
not use ABP to supply power to external circuitry.
Internal Digital Power-Supply Output. Bypass DBP to GND with a 1μF ceramic capacitor. DBP
22
22
DBP
supplies power to the EEPROM memory and the internal logic circuitry. Do not use DBP to
supply power to external circuitry.
Auxiliary Input 2. A 10-bit ADC monitors the input voltage at AUXIN2. The high-impedance
23
23
AUXIN2
AUXIN2 input accepts input voltages up to V REFIN . AUXIN2 does not influence EEPROM-
configurable power-supply sequencing or reset detection functions.
Auxiliary Input 1. A 10-bit ADC monitors the input voltage at AUXIN1. The high-impedance
24
24
AUXIN1
AUXIN1 input accepts input voltages up to V REFIN . AUXIN1 does not influence EEPROM-
configurable power-supply sequencing or reset detection functions.
Voltage Input 6. Configure IN6 to detect voltage thresholds between +1V and +5.5V in 20mV
25
IN6
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN6
to GND with a 0.1μF capacitor installed as close to the device as possible.
Voltage Input 5. Configure IN5 to detect voltage thresholds between +1V and +5.5V in 20mV
26
IN5
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN5
to GND with a 0.1μF capacitor installed as close to the device as possible.
Voltage Input 4. Configure IN4 to detect voltage thresholds between +1V and +5.5V in 20mV
27
27
IN4
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN4
to GND with a 0.1μF capacitor installed as close to the device as possible.
Voltage Input 3. Configure IN3 to detect voltage thresholds between +1V and +5.5V in 20mV
28
28
IN3
increments, or +0.5V to +3.05V in 10mV increments. For improved noise immunity, bypass IN3
to GND with a 0.1μF capacitor installed as close to the device as possible.
Bipolar Voltage Input 2. Configure IN2 to detect negative voltage thresholds from -2.5V to
-15.25V in 50mV increments or -1.25V to -7.625V in 25mV increments. Alternatively, configure
29
29
IN2
IN2 to detect positive voltage thresholds from +2.5V to +15.25V in 50mV increments or +1.25V
to +7.625V in 25mV increments. For improved noise immunity, bypass IN2 to GND with a 0.1μF
capacitor installed as close to the device as possible.
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