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| 型号： | MAX845EUA |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 13/16页 |
| 文件大小： | 0K |
| 描述： | IC DRVR XFRMR CMOS PCMCIA 8UMAX |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| 应用： | 变压器驱动器，PCMCIA |
| 输入电压： | 3.3V，5V |
| 输出数： | 1 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-uMAX |
| 包装： | 管件 |
Isolated Transformer Driver
for PCMCIA Applications
2) Use a test winding to measure ET product (if using
an ungapped toroid) and/or A L value for the core.
3) Determine the number of turns required for the pri-
mary winding. For an ungapped toroid, ET product
V IN
6
V CC
D1
1
from center-tap to D1 must be at least 5V-μs. Other
core types must have sufficient inductance to limit
MAX845
D1 and D2 output current under minimum load con-
ditions, and must not be allowed to saturate.
4) Select a rectifier topology based on performance
GND1 GND2
2
7
D2
8
requirements (ripple vs. loss, and space required
for secondary winding). Refer to Table 2, Rectifier
Topology Trade-Offs.
Figure 11a. 2-Diode Push-Pull
5) Work backward from V OUT requirements to deter-
mine the secondary to primary turns ratio. Include
losses in the rectifier diodes, and estimate resistive
V IN
6
V CC
D1
1
losses in the windings. For load currents exceed-
ing 150mA, use a voltage step-down transformer to
step up the output current from the MAX845. Do
MAX845
not exceed the MAX845’s absolute maximum out-
put current rating (200mA).
GND1 GND2
2 7
D2
8
6) Wind the transformer with the largest diameter wire
that will fit the winding area. Select a wire gauge to
fill the winding aperture as much as possible.
Larger diameter wire has lower resistance per unit
length. Doubling the wire diameter reduces resis-
Figure 11b. 4-Diode Bridge
tive losses by a factor of four.
V IN
6
Bobbin or drum cores suffer from low coupling between
V CC
D1
1
windings. This usually requires bifilar winding for the
two halves of the primary.
Due to the inherent complexity of magnetic circuit
design, it will be necessary to build a prototype and re-
iterate the design. If necessary, adjust the design by
MAX845
GND1 GND2
2
7
D2
8
altering the number of primary or secondary turns, or the
wire gauge. If using a different core material or geome-
try, evaluate its ET product or A L as described above.
Rectifier Topology
Figure 11 shows various rectifier topologies. Refer to
Table 2 for selection criteria. The turns ratio of the trans-
former must be set to provide the minimum required out-
put voltage at the maximum anticipated load, with the
minimum expected input voltage. In addition, the calcu-
lations should allow for worst-case losses in the recti-
fiers. Since the turns ratio determined in this manner will
ordinarily produce a much higher voltage at the sec-
ondary under conditions of high input voltage and/or
light loading, be careful to prevent an overvoltage con-
dition from occurring (see the Output Voltage vs. Load
Current graph in the Typical Operating Characteristics).
Figure 11c. Voltage Doubler
Diodes
Use fast-switching diode rectifiers. Ordinary silicon sig-
nal diodes like the 1N914 or 1N4148 may be used for
low output current levels (less than 50mA), but Schottky
diodes have a lower forward voltage drop and should
be used for higher-current applications. Central
Semiconductor has low-current Schottky diodes as
duals in SOT-23 packages (CMPSH-3 series). The
Nihon SB05W05C is a common-cathode dual in a SOT-
23; it works well in the two-diode full-wave configura-
tion. The Motorola MBR0520 is an excellent choice for
all configurations.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX845EUA+ | 功能描述:功率驱动器IC Isolated Transformer Driver for PCMCIA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX845EUA+T | 功能描述:功率驱动器IC Isolated Transformer Driver for PCMCIA RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX845EUA-LF | 制造商:Maxim Integrated Products 功能描述:- Rail/Tube |
| MAX845EUA-T | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MAX845EVKIT-MM | 功能描述:功率驱动器IC Evaluation Kit for the MAX845 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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