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| 型号： | MAX8717ETI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 4/30页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR PWR SUP 28-TQFN |
| 标准包装： | 2,500 |
| 应用： | 控制器，笔记本电脑电源系统 |
| 输入电压： | 4 V ~ 26 V |
| 输出数： | 2 |
| 输出电压： | 3.3V，5V，1 V ~ 5.5 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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Interleaved High-Efficiency, Dual Power-Supply
Controllers for Notebook Computers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V IN = 12V, FSEL = REF, SKIP_ = 0, V ON_ = V ILIM_ = V CC = V DD = 5V , T A = 0°C to +85°C , unless otherwise noted.
Typical values are at T A = +25°C.)
PARAMETER
SYMBOL
V CSH _ - V CSL _
SKIP_ = REF
CONDITIONS
MAX8716, MAX8717,
MAX8757
MIN
2.5
TYP
5
MAX
7.5
UNITS
mV
ILIM_ = V CC (Note 3) MAX8756
1
2.5
4
Low-Noise-Mode Threshold
V IDLE
V CSH _ - V CSL _
SKIP_ = REF with
respect to current-
limit threshold
MAX8716, MAX8717,
MAX8757
MAX8756
10
5
%
ILIM_ Leakage Current
0.1
μA
Reference Load Regulation
Reference Sink Current
Δ V REF
I REF = 0μA to 50μA
10
10
mV
μA
REF Lockout Voltage
V REF(UVLO) Rising edge, hysteresis = 50mV
1.8
V
FAULT DETECTION
Output Overvoltage Trip
Threshold
Output Overvoltage
Fault-Propagation Delay
Output Undervoltage-Protection
Trip Threshold
Output Undervoltage
Fault-Propagation Delay
Output Undervoltage-Protection
Blanking Time
PGOOD_ Lower Trip Threshold
PGOOD_ Propagation Delay
PGOOD_ Output Low Voltage
t OVP
t UVP
t BLANK
t PGOOD _
MAX8716/MAX8717/MAX8756 only
50mV overdrive,
MAX8716/MAX8717/MAX8756 only
With respect to error-comparator threshold
50mV overdrive
From rising edge of ON_
With respect to error-comparator threshold,
hysteresis = 1%
Falling edge, 50mV overdrive
I SINK = 4mA
11
65
-12.5
15
10
70
10
6144
-10
10
19
75
-8.0
0.4
%
μs
%
μs
1/f OSC
%
μs
V
PGOOD_ Leakage Current
Thermal-Shutdown Threshold
I PGOOD _
T SHDN
High state, PGOOD_ forced to 5.5V
Hysteresis = 15°C
+160
1
μA
°C
GATE DRIVERS
DH_ Gate-Driver On-Resistance
DL_ Gate-Driver On-Resistance
(Note 5)
DH_ Gate-Driver Source/Sink
Current
DL_ Gate-Driver Source Current
DL_ Gate-Driver Sink Current
Dead Time
LX_, BST_ Leakage Current
R DH
R DL
I DH
I DL
(SOURCE)
I DL (SINK)
t DEAD
BST_ - LX_ forced to 5V (Note 5)
DL_, high state
DL_, low state
DH_ forced to 2.5V, BST_ - LX_ forced to
5V
DL_ forced to 2.5V
DL_ forced to 2.5V
DL_ rising
DH_ rising
V BST _ = V LX _ = 26V
1.5
1.7
0.6
2
1.7
3.3
35
26
<2
5
5
3
20
Ω
Ω
A
A
A
ns
μA
4
_______________________________________________________________________________________
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