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参数资料
| 型号： | MAX8727ETB+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | IC DC/DC CONV TFT-LCD 10-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 应用： | 转换器，TFT，LCD |
| 输入电压： | 2.6 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 2.6 V ~ 24 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-TDFN-EP（3x3） |
| 包装： | 带卷 (TR) |
TFT-LCD Step-Up DC-DC Converter
ABSOLUTE MAXIMUM RATINGS
LX to GND ..............................................................-0.3V to +26V
IN, SHDN , FREQ, FB to GND ...................................-0.3V to +6V
COMP, SS to GND .........................................-0.3V to V IN + 0.3V
LX Switch Maximum Continuous RMS Current .....................2.4A
Continuous Power Dissipation (T A = +70 ° C)
10-Pin Thin DFN (derate 24.4mW/ ° C above +70 ° C) ....1951mW
Operating Temperature Range ...........................-40 ° C to +85 ° C
Junction Temperature ......................................................+150 ° C
Storage Temperature Range .............................-65 ° C to +160 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V IN = V SHDN = 3V, FREQ = GND, T A = 0°C to +85°C . Typical values are at T A = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
Input Voltage Range
V OUT < 18V
18V < V OUT < 24V
CONDITIONS
MIN
2.6
4.0
TYP
MAX
5.5
5.5
UNITS
V
Output Voltage Range
24
V
IN Undervoltage-Lockout
Threshold
IN Quiescent Current
IN Shutdown Current
V IN rising, typical hysteresis is 50mV
V FB = 1.3V, not switching
V FB = 1.0V, switching
SHDN = GND
2.20
2.38
0.225
2
0.1
2.57
0.440
5
10.0
V
mA
μA
ERROR AMPLIFIER
FB Regulation Voltage
FB Input Bias Current
Level to produce V COMP = 1.24V
V FB = 1.24V
1.22
50
1.24
125
1.26
250
V
nA
FB Line Regulation
Transconductance
Voltage Gain
Level to produce V COMP = 1.24V, V IN = 2.6V to 5.5V
100
0.05
200
700
0.15
300
%/V
μS
V/V
Shutdown FB Input Voltage
SHDN = GND
0.05
0.10
0.15
V
OSCILLATOR
Frequency
Maximum Duty Cycle
FREQ = GND
FREQ = IN
540
1000
87
640
1220
90
740
1500
93
kHz
%
n-CHANNEL MOSFET
Current Limit
On-Resistance
V FB = 1V, 75% duty cycle
3.0
3.8
125
4.6
250
A
Ω
Leakage Current
Current-Sense Transresistance
V LX = 24V
0.11
30
0.21
45
0.31
μA
V/A
SOFT-START
Reset Switch Resistance
100
Ω
Charge Current
V SS = 1.2V
2.5
4.5
7.5
μA
2
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