参数资料
型号: MB1S
厂商: SENSITRON SEMICONDUCTOR
元件分类: 桥式整流
英文描述: 0.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封装: PLASTIC, MB-S, 4 PIN
文件页数: 2/2页
文件大小: 112K
代理商: MB1S
0.01
0.1
1.0
10
0.4
0.6
0.8
1.0
1.2
1.4
I
,
INST
ANT
ANEOU
S
FORW
ARD
CU
RRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
F
T = 25°C
Pulse Width = 300s
2% duty cycle
j
0
10
20
30
40
50
60
110
100
I
,
P
E
A
K
F
OR
WA
R
D
SU
R
GE
C
U
R
E
N
T
(A
)
FS
M
NUM BER OF CYCLES AT 60 Hz
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
Single half-sine-Wave
(JEDEC M ethod)
1
10
100
1
10
100
C
,
CAP
A
CIT
ANC
E(
p
F
)
J
V , REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
R
T = 25°c
f = 1.0 Mhz
V
= 50 mV p-p
j
sig
0.01
0.1
1.0
10
100
20
040
60
80
100
120
140
I
,
INST
ANT
ANEOUS
REVERSE
CURRENT
(A)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
T = 125°C
j
T = 25°C
j
0.80
0.40
0
40
60
80
100
120
140
I
,
A
VERAGE
FORW
ARD
CURRENT
(A)
(A
V)
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
A
60 Hz Resistive or
Inductive load
MB
MB
8
13
1327
27
B
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相关代理商/技术参数
参数描述
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