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参数资料
| 型号： | MB25W-10 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 桥式整流 |
| 英文描述： | 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 27K |
| 代理商： | MB25W-10 |
DS21303 Rev. D-3
1 of 2
MB15(W)/25(W)/35(W)
High Conductivity
Metal Case
Superior Thermal Design
Surge Ratings to 400A
Terminals Solderable per MIL-STD-202,
Method 208
Universal Terminals; Snap-on, Solder or P.C.
Board Mounting
Characteristic
Symbol
-05
-1
-2
-4
-6
-8
-10
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average
MB15
Rectified Output Current
MB25
@ TC = 55
°C
MB35
I(AV)
15.0
25.0
35.0
A
Peak Forward Surge Current Single
MB15
Half Sine-Wave Superimposed on
MB25
Rated Load (JEDEC Method)
MB35
IFSM
300
400
A
Maximum Instantaneous @ 7.5A
MB15
Forward Voltage Drop per @12.5A
MB25
Rated Load (JEDEC Method) @17.5A
MB35
VF
1.1
1.2
V
Maximum Reverse DC current at Rated
@TA =25
°C
DC Blocking Voltage (per Element)
@TA = 100
°C
IR
10
1.0
A
mA
I2t rating for fusing (8.3ms)
MB15
MB25
MB35
I2t
373
664
A2s
Typical Thermal Resistance (Note 1)
RθJC
2.5
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150
°C
Features
Terminals: 0.25" Faston Terminals
Approx Weight: 29 grams
Mounting Position: Bolt Down on Heat-sink with
Silicone Thermal Compound Between Bridge and
Mounting Surface for Maximum Heat Transfer
Efficiency
Mounting Torque: 20 in. lb. Max.
Polarity: Polarity Symbols Marked on Case
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings and Electrical Characteristics
Notes: 1. Thermal Resistance from junction to case
Mechanical Data
C
A
G
E
B
H
(AC)
(+)
(-)
H
J
A
C
Suffix “W” denotes wire leads
For MB-35W package see page 2.
MB15(W) / 25(W) / 35(W)
HIGH CURRENT SILICON BRIDGE RECTIFIER
MB-35
Dim
Min
Max
A
28.4
28.7
B
10.97
11.23
C
15.5
17.6
E
—
25.4
G
13.3
15.3
H
4.9
Nominal
All Dimensions in mm
POWER SEMICONDUCTOR
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