参数资料
型号: MB25W-10
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 桥式整流
英文描述: 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
文件页数: 2/2页
文件大小: 27K
代理商: MB25W-10
DS21303 Rev. D-3
2 of 2
MB15(W)/25(W)/35(W)
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
A
VERAGE
OUTPUT
CURRENT
(AMPERES)
AMBIENT TEMPERATURE (C)
Fig. 1 Maximum Output Rectified Current
60Hz Resistive or Inductive Load
MB35
R S-A = 0.5C/W
th
MB15
R S-A = 1.0C/W
th
MB25
R S-A = 0.5C/W
th
0
100
200
300
400
500
1.0
10
100
PEAK
FOR
W
ARD
SURGE
CURRENT
(AMPERES)
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Maximum Non-Repetitive Peak Forward
Surge current
MB35
MB25, MB15
0.01
0.1
1.0
10
0
20
40
60
80
100
120
140
INST
ANT
ANEOUS
REVERSE
CURRENT
(mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 3 Typical Reverse Characteristics
T = 100C
C
T = 25C
A
0
5
10
15
20
25
30
35
40
0
50
100
150
200
A
VERAGE
FOR
W
ARD
OUTPUT
CURRENT
(AMPERES)
CASE TEMPERATURE (C)
Fig. 2 Maximum Output Rectified Current
23X9X11.8 cm Wing Plate
60 Hz Resistive or Inductive
MB35
MB25
MB15
B
J
K
A
M
H
L
(AC)
(+)
(-)
MB-35W
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MB404P 40 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
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