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参数资料
| 型号： | MB2M-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | LEAD FREE, MINIATURE, PLASTIC, CASE MBM, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 180K |
| 代理商： | MB2M-E3 |
MB2M, MB4M & MB6M
Document Number 88660
27-Jul-05
Vishay General Semiconductor
www.vishay.com
1
Case Style MBM
~
Miniature Glass Passivated Single-Phase Bridge Rectifiers
Major Ratings and Characteristics
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 A
VF
1.0 V
Tj max.
150 °C
Features
UL Recognition, file number E54214
Ideal for printed circuit boards
Applicable for automative insertion
High surge current capability
Recommended for non-automotive applications
Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for Power Supply, Lighting Ballaster, Battery
Charger, Home Appliances, Office Equipment, and
Telecommunication applications
Mechanical Data
Case: MBM
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
MB2M
MB4M
MB6M
Unit
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output rectified current
(see Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5(1)
0.8(2)
A
Peak forward surge current 8.3 msec single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2sec
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MB2S-E3 | 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB4S-E3 | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB4S | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA |
| MB356-BC01-BP | 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB352-BC01-BP | 35 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB2M-E3/45 | 功能描述:桥式整流器 200 Volt 0.5 Amp 35 Amp IFSM RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB2NA | 制造商:GREATECS 制造商全称:GREATECS 功能描述:Push & Lever Multifunction Switches |
| MB2NAG2 | 制造商:GREATECS 制造商全称:GREATECS 功能描述:Push & Lever Multifunction Switches |
| MB2NAN | 制造商:GREATECS 制造商全称:GREATECS 功能描述:Push & Lever Multifunction Switches |
| M-B2PL-10 | 功能描述:按钮开关 PUSH SW 0.3A/30VDC RoHS:否 制造商:C&K Components 触点形式:2 NC - 2 NO 开关功能:ON ? OFF 电流额定值:4 A 电压额定值 AC:12 V to 250 V 电压额定值 DC:12 V to 50 V 功率额定值: 安装风格:Through Hole 照明:Illuminated 照明颜色:None IP 等级:IP 40 端接类型:Solder 触点电镀:Silver 执行器:Square 盖颜色: 封装: 可燃性等级:UL 94 V-0 |
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