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参数资料
| 型号： | MB3045S-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 144K |
| 代理商： | MB3045S-E3/4W |
M(B,I)3035S & M(B,I)3045S
Vishay General Semiconductor
Document Number: 88952
Revision: 12-Mar-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Schottky Barrier Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD22-B106 (for TO-220AB and TO-262AA
package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V
IFSM
200 A
VF at IF = 30 A
0.61 V
TJ max.
150 °C
1
K
2
3
TO-263AB
NC
A
K
TO-262AA
TO-220AB
1
2
3
M30xxS
PIN 1
PIN 2
CASE
PIN 3
MI30xxS
MB30xxS
HEATSINK
NC
A
K
PIN 1
PIN 3
PIN 2
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M(B,I)3035S
M(B,I)3045S
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
V
Maximum average forward rectified current (fig. 1)
IF(AV)
30
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Peak repetitive reverse current per leg at tp = 2 s, 1 kHz
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction temperature range
TJ
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 175
°C
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