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参数资料
| 型号： | MB3045S-E3/4W |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 144K |
| 代理商： | MB3045S-E3/4W |
New Product
M(B,I)3035S & M(B,I)3045S
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88952
Revision: 12-Mar-09
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
IF = 15 A
IF = 30 A
TJ = 25 °C
VF
0.54
0.65
-
0.70
V
IF = 15 A
IF = 30 A
TJ = 125 °C
0.46
0.61
-
0.66
Maximum instantaneous
reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
40
26
200
55
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
980
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M30xxS
MB30xxS
MI30xxS
UNIT
Typical thermal resistance
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
M3045S-E3/4W
1.878
4W
50/tube
Tube
TO-263AB
MB3045S-E3/4W
1.37
4W
50/tube
Tube
TO-263AB
MB3045S-E3/8W
1.37
8W
800/reel
Tape and reel
TO-262AA
MI3045S-E3/4W
1.454
4W
50/tube
Tube
Figure 1. Forward Current Derating Curve
Case Temperature (°C)
35
15
0
075
150
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
25
100
5
50
125
10
M30xxS
M(B,I)30xxS
30
20
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
300
150
0
1100
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
200
10
50
100
250
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
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