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参数资料
| 型号： | MB4M-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, MINI, PLASTIC, CASE MBM, 4 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 84K |
| 代理商： | MB4M-E3/45 |
MB2M, MB4M & MB6M
Vishay General Semiconductor
Document Number: 88660
Revision: 01-Feb-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
UL recognition, file number E54214
Ideal for printed circuit boards
Applicable for automative insertion
High surge current capability
Recommended for non-automotive applications
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for power supply, lighting ballaster, battery
charger, home appliances, office equipment, and
telecommunication applications.
MECHANICAL DATA
Case: MBM
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV)
0.5 A
VRRM
200 V, 400 V, 600 V
IFSM
35 A
IR
5 A
VF
1.0 V
TJ max.
150 °C
Case Style MBM
~
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2M
MB4M
MB6M
UNIT
Device marking code
2
4
6
Maximum repetitive peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forward output
rectified current (Fig. 1)
on glass-epoxy P.C.B.
on aluminum substrate
IF(AV)
0.5 (1)
0.8 (2)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2s
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MB2M-E3/45 | 0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| MB6ME3 | 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MBR0530/D3 | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| MBR0530 | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| MBR0540PBF | 0.5 A, 40 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB4M-G | 功能描述:桥式整流器 DIODE RECT BRIDGE GPP 0.8A 400V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB4-N66-NA-C1 | 制造商:HellermannTyton 功能描述:Bulk |
| MB4P-90(LF)(SN) | 制造商:JST Manufacturing 功能描述:04 number of circuits pitch 2.5mm Post: Brass, copper-undercoated tin/lead-plate |
| MB4S | 功能描述:桥式整流器 0.5A Bridge RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB4S | 制造商:Vishay Semiconductors 功能描述:BRIDGE RECTIFIER SMD 0.5A 400V |
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