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参数资料
| 型号： | MB4M-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, MINI, PLASTIC, CASE MBM, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 84K |
| 代理商： | MB4M-E3/45 |
MB2M, MB4M & MB6M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88660
Revision: 01-Feb-08
2
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Notes:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MB2M
MB4M
MB6M
UNIT
Maximum instantaneous forward voltage
drop per diode
0.4 A
VF
1.0
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
100
A
Typical junction capacitance per diode (1)
CJ
13
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2M
MB4M
MB6M
UNIT
Typical thermal resistance
RθJA
RθJL
85 (1)
70 (2)
20 (1)
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
MB2M-E3/45
0.22
45
100
Tube
Figure 1. Derating Curve for Output Rectified Current
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
A
v
er
age
F
o
rw
ard
Re
ctified
C
u
rrent
(A)
Ambient Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
0
5
10
15
20
25
30
35
f = 60 Hz
f = 50 Hz
T
A = 40 °C
Single Half Sine-Wave
Number of Cycles
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
1.0 Cycle
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PDF描述 |
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| MBR0530/D3 | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| MBR0530 | 0.5 A, 30 V, SILICON, SIGNAL DIODE |
| MBR0540PBF | 0.5 A, 40 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| MB4-N66-NA-C1 | 制造商:HellermannTyton 功能描述:Bulk |
| MB4P-90(LF)(SN) | 制造商:JST Manufacturing 功能描述:04 number of circuits pitch 2.5mm Post: Brass, copper-undercoated tin/lead-plate |
| MB4S | 功能描述:桥式整流器 0.5A Bridge RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| MB4S | 制造商:Vishay Semiconductors 功能描述:BRIDGE RECTIFIER SMD 0.5A 400V |
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