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参数资料
| 型号： | MB6M/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | PLASTIC, CASE MBM, 4 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 23K |
| 代理商： | MB6M/45 |
MB2M thru MB6M
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88660
2
17-Jul-03
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
1
10
100
0
5.0
10
15
20
25
30
35
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
0.1
1
10
100
0
5.0
10
15
20
25
30
200
0
20
40
60
80
100
120 140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
40
60
80
100
0.01
0.1
1
10
100
Fig. 1 - Derating Curve for Output
Rectified Current
Fig. 3 - Typical Forward Voltage
Characteristics Per Leg
Fig. 5 - Typical Junction Capactitance
Per Leg
Fig. 4 - Typical Reverse Leakage
Characteristics Per Leg
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
A
v
er
age
F
orw
ard
Rectified
Current
(A)
Instantaneous
F
orw
ard
Current
(A)
Instantaneous
Re
v
erse
Leakage
Current
(
A)
J
unction
Capacitance
(pF)
P
eak
F
orw
ard
Surge
Current
(A)
Ambient Temperature (
°C)
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Number of Cycles
Aluminum Substrate
Glass
Epoxy
P.C.B.
Resistive or Inductive Load
TA = 40°C
Single Half Sine-Wave
(JEDEC Method)
f = 60 Hz
f = 50 Hz
TJ = 150°C
TJ = 125°C
TJ = 25°C
1 Cycle
Pulse Width = 300
s
1% Duty Cycle
TJ = 25°C
f = 1 MHz
Vsig = 50mVp-p
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