参数资料
型号: MB84VD2008
厂商: Fujitsu Limited
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: 8米(× 16)闪存
文件页数: 16/30页
文件大小: 393K
代理商: MB84VD2008
16
MB84VD2008
-10
/MB84VD2009
-10
Write Cycle (CEf control) (Flash)
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence
6. These waveforms are for the x16 mode. The addresses differ from x8 mode.
t
CP
t
DS
t
WHWH1
t
WC
t
AH
WE
OE
DQ
t
AS
t
CPH
t
DH
DQ
7
A0H
D
OUT
CEf
555H
PA
PA
Data Polling
3rd Bus Cycle
t
WS
t
WH
t
GHEL
PD
ADDRESSES
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MB84VD2008-10 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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MB84VD2009-10 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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MB84VD21081-85-PBS 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM