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参数资料
| 型号： | MB84VD2008 |
| 厂商： | Fujitsu Limited |
| 英文描述： | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| 中文描述： | 8米（× 16）闪存 |
| 文件页数： | 9/30页 |
| 文件大小： | 393K |
| 代理商： | MB84VD2008 |
第1页第2页第3页第4页第5页第6页第7页第8页当前第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页
9
MB84VD2008
-10
/MB84VD2009
-10
Notes:
1. Address bits A
11
to A
18
= X = “H” or “L” for all address commands except or Program Address (PA), Sector
Address (SA), and Bank Address (BA).
2. Bus operations are defined in Tables 2 and 3.
3. RA = Address of the memory location to be read
PA = Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA = Address of the sector to be erased. The combination of A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will
uniquely select any sector.
BA = Bank Address (A
16
to A
18
)
4. RD =Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
5. SPA =Sector address to be protected. Set sector address (SA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD = Sector protection verify data. Output 01H at protected sector addresses and output 00H at
unprotected sector addresses.
* : This command is valid while Fast Mode.
Table 7 Flash Memory Command Definitions
Com-
mand
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
XXXH F0H
—
—
—
—
555H
AAH 2AAH
55H
555H
F0H
(BA)
555H
555H
AAH 2AAH
55H
555H
A0H
555H
AAH 2AAH
55H
555H
80H
555H
AAH 2AAH
55H
555H
80H
Read/Reset
1
3
—
RA
—
RD
—
—
—
—
—
—
—
—
Read/Reset
Autoselect
3
555H
AAH 2AAH
55H
90H
—
—
—
—
—
—
Program
4
6
6
PA
555H
555H
PD
AAH 2AAH
AAH 2AAH
—
—
55H
55H
—
—
10H
30H
Chip Erase
555H
SA
Sector Erase
Erase
Suspend
Erase
Resume
Set to
Fast Mode
Fast
Program *
Reset from
Fast Mode *
Extended
Sector
Protect
1
BA
B0H
—
—
—
—
—
—
—
—
—
—
1
BA
30H
—
—
—
—
—
—
—
—
—
—
3
555H
AAH 2AAH
55H
555H
20H
—
—
—
—
—
—
2
XXXH A0H
PA
PD
—
—
—
—
—
—
—
—
2
BA
90H
XXXH F0H
—
—
—
—
—
—
—
—
4
XXXH
60H
SPA
60H
SPA
40H
SPA
SD
—
—
—
—
相关PDF资料 |
PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB84VD2008-10 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD2009 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD2009-10 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| MB84VD21081 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
| MB84VD21081-85-PBS | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM |
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