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参数资料
| 型号： | MB84VD2009-10 |
| 厂商： | FUJITSU LTD |
| 元件分类： | 存储器 |
| 英文描述： | 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA48 |
| 封装： | PLASTIC, BGA-48 |
| 文件页数： | 11/30页 |
| 文件大小： | 393K |
| 代理商： | MB84VD2009-10 |
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11
MB84VD2008
-10
/MB84VD2009
-10
I
DC CHARACTERISTICS
* : V
CC
indicate lower of V
CC
f or V
CC
s
** :Embedded Algorithm (program or erase) is in progress. (@5 MHz)
Parame-
ter Sym-
bol
I
LI
I
LO
Parameter Description
Test Conditions
Min.
Typ.
Max.
Unit
Input Leakage Current
Output Leakage Current
Flash V
CC
Active Current
(Read)
Flash V
CC
Active Current
(Program/Erase)
Flash V
CC
Active Current
(Read-While-Program)
Flash V
CC
Active Current
(Read-While-Erase)
Flash V
CC
Active Current
(Erase-Suspend-
Program)
SRAM V
CC
Active
Current
—
—
–1.0
–1.0
—
—
—
—
—
—
+1.0
+1.0
20
10
μ
A
μ
A
I
CC1
f
V
CC
f = V
CC
Max., CEf = V
IL
OE = V
IH
t
CYCLE
= 10 MHz
t
CYCLE
= 5 MHz
mA
I
CC2
f
V
CC
f = V
CC
Max., CEf = V
IL
, OE = V
IH
—
—
35
mA
I
CC3
f
**
CE = V
IL,
OE = V
IH
—
—
45
mA
I
CC4
f
**
CE = V
IL,
OE = V
IH
—
—
45
mA
I
CC5
f
CE = V
IL,
OE = V
IH
—
—
35
mA
I
CC1
s
V
CC
s = V
CC
Max.,
CEs = V
IL
t
CYCLE
= min
t
CYCLE
= 1 MHz
t
CYCLE
= min
t
CYCLE
= 1 MHz
—
—
—
—
—
—
—
—
60
12
50
6
mA
mA
mA
mA
I
CC2
s
SRAM V
CC
Active
Current
Flash V
CC
Standby
Current
Flash V
CC
Standby
Current (RESET)
SRAM V
CC
Standby
Current
CEs = 0.2 V,
WE = V
CC
s – 0.2 V
V
CC
f = V
CC
Max., CEf = V
CC
f ± 0.3 V
RESET = V
CC
f ± 0.3 V
I
SB1
f
—
—
5
μ
A
I
SB2
f
V
CC
f = V
CC
Max., RESET = V
SS
± 0.3 V
—
—
5
μ
A
I
SB1
s
CEs = V
IH
—
—
2
mA
I
SB2
s
SRAM V
CC
Standby
Current
CEs = V
CC
–0.2 V
V
CC
s =
3.0 V
±10%
V
CC
s =
3.3 V
±0.3 V
T
A
= 25°C
—
1
2.5
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
V
V
T
A
= –20 to +85°C
—
—
55
T
A
= 25°C
—
1.5
3
T
A
= –20 to +85°C
—
—
60
V
CC
s =
3.0 V
T
A
= 25°C
T
A
= –20 to +40°C
T
A
= –20 to +85°C
—
—
—
–0.3
2.2
1
—
—
—
—
2
5
50
0.6
V
IL
V
IH
Input Low Level
Input High Level
Output Low Voltage
Level
Output High Voltage
Level
Flash Low V
CC
Lock-Out
Voltage
—
—
V
CC
+0.3*
V
OL
I
OL
= 2.1 mA,
V
CC
f = V
CC
s = V
CC
Min.
I
OH
= –500
μ
A,
V
CC
f = V
CC
s = V
CC
Min.
—
—
0.4
V
V
OH
V
CC
– 0.5
—
—
V
V
LKO
—
2.3
—
2.5
V
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