参数资料
型号: MB84VD2009-10
厂商: FUJITSU LTD
元件分类: 存储器
英文描述: 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封装: PLASTIC, BGA-48
文件页数: 15/30页
文件大小: 393K
代理商: MB84VD2009-10
15
MB84VD2008
-10
/MB84VD2009
-10
Write Cycle (WE control) (Flash)
t
CH
t
WP
t
WHWH1
t
WC
t
AH
CEf
OE
t
RC
DQ
t
AS
t
F
OE
t
WPH
t
GHWL
t
DH
DQ
7
PD
A0H
D
OUT
WE
555H
PA
PA
t
OH
Data Polling
3rd Bus Cycle
t
CS
t
CO
t
DS
D
OUT
ADDRESSES
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles out of four bus cycle sequence
6. These waveforms are for the x16 mode. The addresses differ from x8 mode.
相关PDF资料
PDF描述
MB84VD2008 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
MB84VD2009 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
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