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参数资料
| 型号： | MB8504S064AC-67 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×64 Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位同步动态RAM) |
| 中文描述： | 的CMOS 4米× 64位同步动态随机存取存储器（SDRAM）的CMOS（4分× 64位同步动态RAM）的 |
| 文件页数： | 9/20页 |
| 文件大小： | 404K |
| 代理商： | MB8504S064AC-67 |
9
MB8504S064AC-100/-84/-67
I
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.)
Notes:
*1. Voltages referenced to V
SS
(= 0 V)
*2. I
CC
depends on the output termination, load conditions, clock cycle rate and signal clock rate.
The specified values are obtained with the output open and no termination register.
*3. An initial pause (DESL on NOP) of 200
μ
s is required after power-on followed by a minimum of eight
Auto-refresh cycles.
*4. Values except I
CC2P
are for when one side of the double-sided module is in standby mode and the other
side has two banks active in burst mode.
*5. DC characteristics is the Serial PD standby state ( V
IN
= GND or V
CC
).
Parameter
Notes
Symbol
Condition
Value
Unit
Min.
Max.
920
880
840
1280
1200
1120
Operating Current
(Average Power
Supply Current)
*2
MB8504S064AC-100
MB8504S064AC-84
I
CC1S
No Burst;
t
CK
= min
t
RC
= min
One Bank Active
No Burst;
t
CK
= min
t
RC
= min
All Banks Active
CKE = V
IL
, t
CK
= min
All Banks Idle
CKE = V
IH
, t
CK
= min
All Banks Idle
CKE = V
IL
, t
CK
= min
Any Bank Active
CKE = V
IH
, t
CK
= min
Any Bank Active
—
mA
mA
mA
mA
mA
mA
MB8504S064AC-67
MB8504S064AC-100
MB8504S064AC-84
I
CC1D
—
MB8504S064AC-67
Precharge Standby
Current (Power
Supply Current)
*2
I
CC2P
—
32
mA
I
CC2N
—
480
mA
Active Standby Current
(Power Supply Current)
*2
I
CC3P
—
480
mA
I
CC3N
—
640
mA
Burst Mode Current
(Average Power
Supply Current)
*2
MB8504S064AC-100
MB8504S064AC-84
MB8504S064AC-67
MB8504S064AC-100
MB8504S064AC-84
I
CC4
t
CK
= min
—
—
—
—
—
—
1320
1240
1160
1360
1280
1200
mA
mA
mA
mA
mA
mA
Auto-refresh Current
(Average Power
Supply Current)
*2
I
CC5
Auto Refresh
t
CK
= min
t
RC
= min
t
RRD
= min
MB8504S064AC-67
Self-refresh Current
(Average Power Supply Current)
I
CC6
t
CK
= V
IL
—
32
mA
Input Leakage Current (All Inputs)
I
I (L)
0 V
≤
V
IN
≤
V
CC
All other pins not
under test = 0 V
3.0 V
≤
V
CC
≤
3.6 V
Output is disabled (Hi-Z)
0 V
≤
V
OUT
≤
V
CC
3.0 V
≤
V
CC
≤
3.6 V
–80
80
μ
A
Output Leakage Current
I
O(L)
–20
20
μ
A
LVTTL Output
High Voltage
LVTTL Output
Low Voltage
*1
V
OH
I
OH
= –2.0 mA
2.4
—
V
*1
V
OL
I
OL
= +2.0 mA
—
0.4
V
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| MB8504S064AF-100 | CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位 同步动态RAM) |
| MB8504S064AF-67 | CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位 同步动态RAM) |
| MB8504S064AF-84 | CMOS 4M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×64位 同步动态RAM) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB8508S064CE-100 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM |
| MB85101BAN | 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101BBN | 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101CAN | 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
| MB85101CBN | 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS |
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