参数资料
型号: MB8504S072AC-84
厂商: Fujitsu Limited
英文描述: CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
中文描述: 4米× 72Bit的CMOS同步动态随机存取存储器(SDRAM)的CMOS(4分× 72位同步动态RAM)的
文件页数: 8/15页
文件大小: 362K
代理商: MB8504S072AC-84
8
MB8504S072AC-100/-84/-67
I
DC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.)
Parameter
Notes
Symbol
Condition
Value
Unit
Min.
–10
–10
75
Max.
1190
1120
1051
1640
1518
1396
159
141
123
636
621
607
636
621
607
816
801
787
1737
1606
1476
1377
1269
1161
384
369
355
10
10
–75
Operating Current
(Average Power
Supply Current)
*2
MB8504S072AC-100
I
CC1S
No Burst;
t
CK
= min
t
RC
= min
One Bank Active
No Burst;
t
CK
= min
t
RC
= min
All Banks Active
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
I
CC1D
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
Precharge Standby
Current (Power
Supply Current)
*2
I
CC2P
CKE = V
IL
, t
CK
= min
All Banks Idle
I
CC2N
CKE = V
IH
, t
CK
= min
All Banks Idle
Active Standby
Current (Power
Supply Current)
*2
I
CC3P
CKE = V
IL
, t
CK
= min
Any Bank Active
I
CC3N
CKE = V
IH
, t
CK
= min
Any Bank Active
Burst Mode Current
(Average Power
Supply Current)
*2
I
CC4
t
CK
= min
Auto-refresh Current
(Average Power
Supply Current)
*2
I
CC5
Auto Refresh
t
CK
= min
t
RC
= min
t
RRD
= min
MB8504S072AC-84
MB8504S072AC-67
MB8504S072AC-100
MB8504S072AC-84
MB8504S072AC-67
Self-refresh Current
(Average Power
Supply Current)
I
CC6
t
CK
= V
IL
Input Leakage Current (All inputs except DQ)
I
I (L)
V
IN
= 0 V
V
IN
= V
CC
V
IN
= 0.8 V
V
IN
= 2 V
Output is disabled (Hi-Z)
0 V
V
OUT
V
CC
3.0 V
V
CC
3.6 V
μ
A
Input Hold Current
(All inputs except CLK, PDE, DQ)
I
I (Hold)
μ
A
Output Leakage Current (All DQ)
I
O (L)
–10
10
μ
A
LVTTL Output
High Voltage
LVTTL Output
Low Voltage
*1
V
OH
I
OH
= –2.0 mA
2.4
V
*1
V
OL
I
OL
= +2.0 mA
0.4
V
相关PDF资料
PDF描述
MB8504S072AD-100 CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
MB8504S072AD-67 CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
MB8504S072AD-84 CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
MB8516SR72CA-102 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
MB8516SR72CA-102DG 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
相关代理商/技术参数
参数描述
MB8508S064CE-100 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM
MB85101BAN 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB85101BBN 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB85101CAN 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS
MB85101CBN 制造商:MURATA 制造商全称:Murata Manufacturing Co., Ltd. 功能描述:HIGH FREQUENCY CERAMIC CAPACITORS