参数资料
型号: MB8504S072AD-67
厂商: Fujitsu Limited
英文描述: CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
中文描述: 4米× 72Bit的CMOS同步动态随机存取存储器(SDRAM)的CMOS(4分× 72位同步动态RAM)的
文件页数: 7/14页
文件大小: 359K
代理商: MB8504S072AD-67
7
MB8504S072AD-100/-84/-67
I
ABSOLUTE MAXIMUM RATINGS (See WARNING)
* :Voltages referenced to V
SS
(= 0 V)
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
I
RECOMMENDED OPERATING CONDITIONS
*1. Voltages referenced to V
SS
(= 0 V)
WARNING:
Recommended operating conditions are normal operating ranges for the semiconductor device. All
the device’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside
these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representative beforehand.
I
CAPACITANCE
(V
CC
= +3.3 V, f = 1 MHz, T
A
= +25
°
C)
Value
Parameter
Symbol
Value
Unit
Min.
Max.
Supply Voltage*
V
CC
–0.5
+4.6
V
Input Voltage*
V
IN
–0.5
+4.6
V
Output Voltage*
V
OUT
–0.5
+4.6
V
°
C
W
Storage Temperature
T
STG
–55
+125
Power Dissipation
P
D
25
Output Current (D.C.)
I
OUT
–50
+50
mA
Parameter
Notes
Symbol
Value
Unit
Min.
Typ.
Max.
Supply Voltage
*1
V
CC
3.0
3.3
3.6
V
V
SS
0
0
0
V
Input High Voltage, All Inputs
*1
V
IH
2.0
V
CC
+0.5
V
Input Low Voltage, All Inputs
*1
V
IL
–0.5
0.8
V
°
C
Ambient Temperature
T
A
0
+70
Parameter
Symbol
Unit
Min.
Max.
Input Capacitance
A
0
to A
11
C
IN1
10
pF
RAS, CAS, WE
C
IN2
10
pF
CS
C
IN3
14
pF
CKE
0
C
IN4
14
pF
CLK
C
IN5
10
pF
DQM
C
IN6
10
pF
Input/Output Capacitance
DQ
0
to DQ
71
C
DQ
13
pF
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