- 您现在的位置：买卖IC网 > PDF目录377893 > MB85391A-70 (Fujitsu Limited) CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32位 快速页面存取模式动态RAM) PDF资料下载
参数资料
| 型号： | MB85391A-70 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32位 快速页面存取模式动态RAM) |
| 中文描述： | 的CMOS 4米× 32Bit的快速页面模式内存工作主任（的CMOS 4米× 32位快速页面存取模式动态内存） |
| 文件页数： | 1/11页 |
| 文件大小： | 279K |
| 代理商： | MB85391A-70 |
1
DS05-11209-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
×
32
FAST PAGE MODE DRAM MODULE
MB85391A-60/-70
CMOS 4M
×
32 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of eight MB8117400A devices. The MB85391A is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85391A are the
same as the MB8117400A which features fast page mode operation. For ease of memory expansion, the
MB85391A is offered in a 72-pad Single In-line Memory Module package (SIMM).
I
ABSOLUTE MAXIMUM RATINGS (see NOTE)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
8
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相关PDF资料 |
PDF描述 |
|---|---|
| MB85392A-60 | CMOS 8M×32Bit Fast Page Mode DRAM Module(CMOS 8M×32位 快速页面存取模式动态RAM) |
| MB85396A-60 | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM) |
| MB85396A-70 | CMOS 4M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×36位 同步动态RAM) |
| MB85502-012 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
| MB85502-015 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
发布紧急采购，3分钟左右您将得到回复。