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参数资料
| 型号： | MB85502-012 |
| 厂商： | FUJITSU LTD |
| 元件分类： | DRAM |
| 英文描述： | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
| 中文描述： | 8M X 36 SYNCHRONOUS DRAM MODULE, 13 ns, PZMA72 |
| 文件页数： | 1/10页 |
| 文件大小： | 236K |
| 代理商： | MB85502-012 |
1
DS05-11203-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 8M
SYNCHRONOUS DRAM MODULE
×
36 Bit
MB85502-012/-015
CMOS 8M
×
36 Bit Synchronous DRAM Module
I
DESCRIPTION
The Fujitsu MB85502 is a fully decoded, CMOS Synchronous Dynamic Random Access Memory (SDRAM)
module consisting of eighteen MB81116421 devices which organized as two banks of 2,097,152-word
The MB85502 organized as 8,388,608
×
36-bit is optimized for those applications requiring high speed, high
performance, large memory shortage, and high density memory organizations.
This module is ideally suited for supercomputers, workstations, laser printers, high resolution graphic adapters,
accelerators and other applications where a simple interface is needed.
The all inputs/ outputs are LVTTL compatible, and supply voltage tolerance is
×
4-bit.
±
9%.
I
ABSOLUTE MAXIMUM RATINGS (See NOTE)
*1 V
SS
= 0 V
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V *1
V *1
V *1
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +4.6
–0.5 to +4.6
–0.5 to +4.6
±
50
24
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相关PDF资料 |
PDF描述 |
|---|---|
| MB85502-015 | CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM) |
| MB85R1002 | Memory FRAM |
| MB85R1002PFTN | Memory FRAM |
| MB86290A | Graphics Controller Hardware Specifications |
| MB86291A | Graphics Display Controller |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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