参数资料
型号: MB85502-012
厂商: FUJITSU LTD
元件分类: DRAM
英文描述: CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36位 同步动态RAM)
中文描述: 8M X 36 SYNCHRONOUS DRAM MODULE, 13 ns, PZMA72
文件页数: 5/10页
文件大小: 236K
代理商: MB85502-012
5
MB85502-012/MB85502-015
I
DC CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
(Continued)
Parameter
Symbol
Conditions
Value
Unit
Min.
Max.
Input Leakage Current
All inputs
except DQ
I
LI
V
IN
= 0 V
–10
10
μ
A
V
IN
= V
CC
–10
10
Input Hold Current
I
I (Hold)
V
IN
= 0.8 V
75
μ
A
V
IN
= 2 V
–75
Output Leakage Current
I
LO
0 V
V
IN
V
CC
Output high impedance
–20
20
μ
A
Output High Voltage
1
LVTTL
V
OH
I
OH
= –2.0 mA
2.4
V
Output Low Voltage
1
V
OL
I
OL
= +2.0 mA
0.4
V
Operating Current
(Average Power
Supply Current)
2
MB85502-012
I
CC1S
No Burst: t
CK
= min.
One bank active
1204 (169)
mA
MB85502-015
1126 (136)
MB85502-012
I
CC1D
No Burst: t
CK
= min.
Two banks active
1588 (238)
mA
MB85502-015
1451 (191)
Precharge
Standby Current
(Power Supply
Current)
2
ADD=Fix “L”
I
CC2P
CKE = V
IL
Two banks idle
t
CK
= min.
Power down mode
121 (103)
mA
ADD=Fix “H”
117 (99)
ADD=Change
248 (230)
ADD=Fix “L”
I
CC2N
CKE = V
IH
Two banks idle
t
CK
= min.
641 (102)
mA
ADD=Fix “H”
639 (99)
ADD=Change
770 (230)
Active
Standby Current
(Power Supply
Current)
2
ADD=Fix “L”
I
CC3P
CKE = V
IL
One bank active
t
CK
= min.
642 (103)
mA
ADD=Fix “H”
639 (99)
ADD=Change
770 (230)
ADD=Fix “L”
I
CC3N
CKE = V
IH
One bank active
t
CK
= min.
912 (102)
mA
ADD=Fix “H”
909 (99)
ADD=Change
1040 (230)
Burst Mode Current
(Average Power
Supply Current)
2
MB85502-012
I
CC4
t
CK
= min.
1722 (327)
mA
MB85502-015
1567 (262)
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