参数资料
型号: MB85R1002
厂商: Fujitsu Limited
英文描述: Memory FRAM
中文描述: 内存的FRAM
文件页数: 1/12页
文件大小: 157K
代理商: MB85R1002
DS05-13104-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
1 M Bit (64 K
×
16)
MB85R1002
DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x
16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 10
10
times of read/write access, significantly
outperforming FLASH memory and E
2
PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
FEATURES
Bit configuration : 65,536 words x 16 bits
Read/write endurance : 10
10
times
Operating power supply voltage : 3.0 V to 3.6 V
Operating temperature range : -20 °C to +85 °C
LB and UB data byte control
48-pin, TSOP(1) plastic package
PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)
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参数描述
MB85R1002_07 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16)
MB85R1002_09 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K × 16)
MB85R1002A 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K x 16)
MB85R1002A_1107 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (64 K × 16)
MB85R1002ANC-GE1 功能描述:IC FRAM 1MBIT 150NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6