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参数资料
| 型号： | MB85R1002 |
| 厂商： | Fujitsu Limited |
| 英文描述： | Memory FRAM |
| 中文描述： | 内存的FRAM |
| 文件页数： | 6/12页 |
| 文件大小： | 157K |
| 代理商： | MB85R1002 |
MB85R1002
6
■
ELECTRICAL CHARACTERISTICS
1.
DC CHARACTERISTICS
(V
CC
= 3.0 V to 3.6 V, T
A
=
20
o
C to
+
85
o
C)
*1 : I
out
: Output current
*2 : All other inputs (CE1, CE2, OE, WE, LB, UB) should be at CMOS levels, i.e., H
≥
V
CC
0.2 V, L
≤
0.2 V.
2.
AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature :
20
o
C to
+
85
o
C
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 10 ns
Input Falling Time : 10 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Operation
(V
CC
= 3.0 V to 3.6 V, T
A
=
20
o
C to
+
85
o
C)
Value
Min
250
210
210
210
210
40
10
50
10
10
Parameter
Symbol
Test Conditions
Value
Unit
Min
Typ
Max
10
10
10
Input Leakage Current
Output Leakage Current
Supply Current
|
I
LI
|
|
I
LO
|
I
CC
V
IN
= 0 V to V
CC
V
OUT
= 0 V to V
CC
, CE1 = V
IH
or OE = V
IH
CE1 = 0.2 V, CE2 = V
CC
0.2 V, I
out
= 0 mA*
1
CE1
≥
V
CC
0.2 V
CE2
≤
0.2 V*
2
OE
≥
V
CC
0.2 V, WE
≥
V
CC
0.2 V*
2
LB
≥
V
CC
0.2 V, UB
≥
V
CC
0.2 V*
2
I
OH
=
2.0 mA
I
OL
= 2.0 mA
μ
A
μ
A
mA
Standby Current
I
SB
10
100
μ
A
Output Voltage (high)
Output Voltage (low)
V
OH
V
OL
V
CC
x 0.8
0.4
V
V
Parametere
symbol
unit
Max
2,000
2,000
2,000
2,000
100
100
100
25
Read Cycle time
CE1 Active Time
CE2 Active Time
OE Active Time
LB, UB Active Time
Pre-charge Time
Address Setup Time
Address Hold Time
OE Setup Time
LB, UB Setup Time
CE1 Access Time
CE2 Access Time
OE Access Time
OE Output Floating Time
t
RC
t
CA1
t
CA2
t
RP
t
BP
t
PC
t
AS
t
AH
t
ES
t
BS
t
CE1
t
CE2
t
OE
t
OHZ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85R1002_07 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K 】 16) |
| MB85R1002_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K × 16) |
| MB85R1002A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (64 K x 16) |
| MB85R1002A_1107 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (64 K × 16) |
| MB85R1002ANC-GE1 | 功能描述:IC FRAM 1MBIT 150NS 48TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
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