参数资料
型号: MB85R1002
厂商: Fujitsu Limited
英文描述: Memory FRAM
中文描述: 内存的FRAM
文件页数: 7/12页
文件大小: 157K
代理商: MB85R1002
MB85R1002
7
(2) Write Operation
(V
CC
= 3.0 V to 3.6 V, T
A
=
20
o
C to
+
85
o
C)
(3) Power ON/OFF Sequence
* : Condition for power detection circuit to function
3.
Pin Capacitance
(f
=
1 MHz, T
A
=
+
25
o
C)
4.
Reliability
Data retention 10 years (T
A
=
0
°
C to
+
55
°
C)
Access endurance 10
10
times (T
A
=
20
°
C to
+
85
°
C)
Parameter
Symbol
Value
Notes
Min
Max
2,000
2,000
2,000
Write Cycle Time
CE1 Active Time
CE2 Active Time
LB, UB Active Time
Pre-Charge Time
Address Setup Time
Address Hold Time
LB, UB Setup Time
Write Pulse Width
Data Setup Time
Data Hold Time
Write Setup Time
t
WC
t
CA1
t
CA2
t
BP
t
PC
t
AS
t
AH
t
BS
t
WP
t
DS
t
DH
t
WS
250
210
210
210
40
10
50
10
210
10
50
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Parameter
Sym-
bol
Value
Units
Min
Typ
Max
CE1 LEVEL holding time in Power OFF
t
pd
85
ns
CE1 LEVEL holding time in Power ON
t
pu
85
ns
Power interval *
t
pi
0.5
s
Parameter
Symbol
Test Condition
Value
Unit
Min
Typ
Max
Input Capacitance
C
IN
V
IN
=
GND
V
OUT
=
GND
10
pF
Output Capacitance
C
OUT
10
pF
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