参数资料
型号: MB85R1002PFTN
厂商: FUJITSU LTD
元件分类: 存储器
英文描述: Memory FRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO48
封装: 12 X 12.40 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, PLASTIC, TSOP1-48
文件页数: 1/12页
文件大小: 157K
代理商: MB85R1002PFTN
DS05-13104-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
1 M Bit (64 K
×
16)
MB85R1002
DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536 words x
16 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, MB85R1002 is able to retain data without back-up battery.
The memory cells used for the MB85R1002 has improved at least 10
10
times of read/write access, significantly
outperforming FLASH memory and E
2
PROM in endurance.
The MB85R1002 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
FEATURES
Bit configuration : 65,536 words x 16 bits
Read/write endurance : 10
10
times
Operating power supply voltage : 3.0 V to 3.6 V
Operating temperature range : -20 °C to +85 °C
LB and UB data byte control
48-pin, TSOP(1) plastic package
PACKAGE
48-pin plastic TSOP(1)
(FPT-48P-M25)
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MB85R2001 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 2 M Bit (256 K × 8)
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MB85R2001_09 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 2 M Bit (256 K × 8)
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