参数资料
型号: MB85R1002PFTN
厂商: FUJITSU LTD
元件分类: 存储器
英文描述: Memory FRAM
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO48
封装: 12 X 12.40 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, PLASTIC, TSOP1-48
文件页数: 5/12页
文件大小: 157K
代理商: MB85R1002PFTN
MB85R1002
5
ABSOLUTE MAXIMUM RATINGS
WARNING:
Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
(V
CC
= 3.0 V to 3.6 V, T
A
=
20
o
C to
+
85
o
C)
Value
WARNING:
The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
Parameter
Symbol
Rating
Unit
Min
0.5
0.5
0.5
20
40
Max
+
4.0
Supply Voltage
V
CC
V
Input Voltage
V
IN
V
CC
+
0.5
V
CC
+
0.5
+
85
+
125
V
Output Voltage
V
OUT
V
Ambient Operating Temperature
T
A
o
C
Storage Temperature
T
stg
o
C
Parameter
Symbol
Unit
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
V
Input Voltage (high)
V
IH
V
CC
x 0.8
0.5
20
V
CC
+
0.5
+
0.6
+
85
V
Input Voltage (low)
V
IL
V
Ambient Operating Temperature
T
A
o
C
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