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参数资料
| 型号： | MB9BF117TPMC |
| 厂商： | FUJITSU LTD |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, FLASH, RISC MICROCONTROLLER, PQFP176 |
| 封装： | 24 X 24 MM, 1.70 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, PLASTIC, LQFP-176 |
| 文件页数： | 70/116页 |
| 文件大小： | 1051K |
| 代理商： | MB9BF117TPMC |
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57
FUJITSU SEMICONDUCTOR CONFIDENTIAL
r1.0
MB9B110T Series
DS706-00016-0v01-E
·
Lead-Free Packaging
CAUTION: When ball grid array (BGA) packages with Sn-Ag-Cu balls are mounted using Sn-Pb eutectic
soldering, junction strength may be reduced under some conditions of use.
·
Storage of Semiconductor Devices
Because plastic chip packages are formed from plastic resins, exposure to natural environmental conditions
will cause absorption of moisture. During mounting, the application of heat to a package that has absorbed
moisture can cause surfaces to peel, reducing moisture resistance and causing packages to crack. To prevent,
do the following:
(1) Avoid exposure to rapid temperature changes, which cause moisture to condense inside the product.
Store products in locations where temperature changes are slight.
(2) Use dry boxes for product storage. Products should be stored below 70% relative humidity, and at
temperatures between 5°C and 30°C.
When you open Dry Package that recommends humidity 40% to 70% relative humidity.
(3) When necessary, FUJITSU SEMICONDUCTOR packages semiconductor devices in highly
moisture-resistant aluminum laminate bags, with a silica gel desiccant. Devices should be sealed in
their aluminum laminate bags for storage.
(4) Avoid storing packages where they are exposed to corrosive gases or high levels of dust.
·
Baking
Packages that have absorbed moisture may be de-moisturized by baking (heat drying). Follow the FUJITSU
SEMICONDUCTOR recommended conditions for baking.
Condition: 125°C/24 h
·
Static Electricity
Because semiconductor devices are particularly susceptible to damage by static electricity, you must take
the following precautions:
(1) Maintain relative humidity in the working environment between 40% and 70%. Use of an apparatus
for ion generation may be needed to remove electricity.
(2) Electrically ground all conveyors, solder vessels, soldering irons and peripheral equipment.
(3) Eliminate static body electricity by the use of rings or bracelets connected to ground through high
resistance (on the level of 1 M).
Wearing of conductive clothing and shoes, use of conductive floor mats and other measures to
minimize shock loads is recommended.
(4) Ground all fixtures and instruments, or protect with anti-static measures.
(5) Avoid the use of styrofoam or other highly static-prone materials for storage of completed board
assemblies.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB9BF118SPMC-GE1 | 制造商:FUJITSU 功能描述: 制造商:Fujitsu 功能描述:Bulk |
| MB9BF118TPMC-GE1 | 制造商:Fujitsu 功能描述:Bulk |
| MB9BF121JPMC-G-JNE2 | 功能描述:ARM? Cortex?-M3 FM3 MB9B120J Microcontroller IC 32-Bit 72MHz 64KB (64K x 8) FLASH 32-LQFP (7x7) 制造商:cypress semiconductor corp 系列:FM3 MB9B120J 包装:托盘 零件状态:有效 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:72MHz 连接性:CSIO，I2C，LIN，UART/USART 外设:DMA，LVD，POR，PWM，WDT I/O 数:23 程序存储容量:64KB（64K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:8K x 8 电压 - 电源（Vcc/Vdd）:2.7 V ~ 5.5 V 数据转换器:A/D 8x12b 振荡器类型:内部 工作温度:-40°C ~ 105°C（TA） 封装/外壳:32-LQFP 供应商器件封装:32-LQFP（7x7） 标准包装:250 |
| MB9BF121JWQN-G-JNE2 | 功能描述:ARM? Cortex?-M3 FM3 MB9B120J Microcontroller IC 32-Bit 72MHz 64KB (64K x 8) FLASH 32-QFN (4x4) 制造商:cypress semiconductor corp 系列:FM3 MB9B120J 包装:托盘 零件状态:有效 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:72MHz 连接性:CSIO，I2C，LIN，UART/USART 外设:DMA，LVD，POR，PWM，WDT I/O 数:23 程序存储容量:64KB（64K x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:8K x 8 电压 - 电源（Vcc/Vdd）:2.7 V ~ 5.5 V 数据转换器:A/D 8x12b 振荡器类型:内部 工作温度:-40°C ~ 105°C（TA） 封装/外壳:32-WFQFN 裸露焊盘 供应商器件封装:32-QFN（4x4） 标准包装:490 |
| MB9BF218SPMC-GK7E1 | 功能描述:ARM? Cortex?-M3 FM3 MB9B210T Microcontroller IC 32-Bit 144MHz 1MB (1M x 8) FLASH 144-LQFP (20x20) 制造商:cypress semiconductor corp 系列:FM3 MB9B210T 包装:托盘 零件状态:在售 核心处理器:ARM? Cortex?-M3 核心尺寸:32-位 速度:144MHz 连接性:CSIO，EBI/EMI，以太网，I2C，LIN，UART/USART，USB 外设:DMA，LVD，POR，PWM，WDT I/O 数:122 程序存储容量:1MB（1M x 8） 程序存储器类型:闪存 EEPROM 容量:- RAM 容量:128K x 8 电压 - 电源（Vcc/Vdd）:2.7 V ~ 5.5 V 数据转换器:A/D 24x12b 振荡器类型:内部 工作温度:-40°C ~ 85°C（TA） 封装/外壳:144-LQFP 供应商器件封装:144-LQFP（20x20） 标准包装:60 |
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