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| 型号： | MBD770DWT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 103K |
| 描述： | DIODE SCHOTTKY DUAL 70V SOT-363 |
| 标准包装： | 1 |
| 二极管类型： | 肖特基 - 2 个独立式 |
| 电压 - 峰值反向(最大)： | 70V |
| 电容@ Vr, F： | 1pF @ 20V，1MHz |
| 功率耗散（最大）： | 120mW |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | MBD770DWT1GOSDKR |
MBD110DWT1G, MBD330DWT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
MBD110DWT1G
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
NF, NOISE FIGURE (dB) , FORWARD CURRENT (mA)
I
F
, REVERSE LEAKAGE ( A)
I
R
1
0.1 0.2 0.5 1.0 2.0 5.0 10
11
10
9
8
7
6
5
4
3
2
0.6
0 1.0 2.0 3.0 4.0
1.0
0.9
0.8
0.7
0.1
0.3 0.4 0.5 0.6
100
10
1.0
0.7 0.8
0.01
30 40 50 60 70 80 10090
1.0
130
110 120
0.7
0.5
0.2
0.1
0.07
0.05
0.02
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR
= 3.0 V
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA
= -
°C
TA
= 85
°C
TA
= 25
°C
Note 3 ?
L
S
is measured on a
package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Note 1 ?
C
D
and C
T
are measured using a capacitance
bridge (Boonton Electronics Model 75A or equival-
ent).
Note 2 ?
Noise figure
measured with diode under test in tuned di-
ode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MBD110DWT1G
MBD110DWT1G
MBD110DWT1G
MBD110DWT1G
C
D
,
CAPACITANCE (pF)
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相关代理商/技术参数 |
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| MBD-902-AL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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| MBD-902-XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Low TCR, 1mW Dual Rejustor⑩ Micro-Resistor |
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