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参数资料
| 型号： | MBDF1200ZEL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TSSOP-8 |
| 文件页数： | 10/10页 |
| 文件大小： | 187K |
| 代理商： | MBDF1200ZEL |
MBDF1200Z
9
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 948J–01
ISSUE O
TSSOP–8
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
2.90
3.10
0.114
0.122
B
4.30
4.50
0.169
0.177
C
–––
1.20
–––
0.047
D
0.05
0.15
0.002
0.006
F
0.50
0.75
0.020
0.030
G
0.65 BSC
0.026 BSC
H
0.50
0.60
0.020
0.024
J
0.09
0.20
0.004
0.008
J1
0.09
0.16
0.004
0.006
K
0.19
0.30
0.007
0.012
K1
0.19
0.25
0.007
0.010
L
6.40 BSC
0.252 BSC
M
0
8
0
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
___
_
SECTION N–N
SEATING
PLANE
IDENT.
PIN 1
1
4
8
5
SEE DETAIL E
J J1
B
C
D
A
K
K1
H
G
DETAIL E
F
M
L
2X
L/2
–U–
S
U
0.15 (0.006) T
S
U
0.15 (0.006) T
S
U
M
0.10 (0.004)
V S
T
0.10 (0.004)
–T–
–V–
–W–
0.25 (0.010)
8x
REF
K
N
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