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参数资料
| 型号： | MBDF1200ZEL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TSSOP-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 187K |
| 代理商： | MBDF1200ZEL |
MBDF1200Z
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
10
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
5.0
50
Adc
Gate–Body Leakage Current (VGS = ± 10 Vdc, VDS = 0 Vdc)
IGSS
—
3.0
Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
—
0.7
2.6
1.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(1) (3)
(VGS = 4.5 Vdc, ID = 3.0 Adc)
(VGS = 2.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
32
44
38
50
m
Forward Transconductance (VDS = 8.0 Vdc, ID = 1.5 Adc)
(1)
gFS
5.0
6.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vdc V
0 Vdc
Ciss
—
330
470
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
270
380
Transfer Capacitance
f = 1.0 MHz)
Crss
—
95
140
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
8 0 Vd
I
3 0 Ad
td(on)
—
19
38
ns
Rise Time
(VDD = 8.0 Vdc, ID = 3.0 Adc,
(1)
tr
—
148
296
Turn–Off Delay Time
( DD
, D
,
VGS = 4.5 Vdc, RG = 6.0 ) (1)
td(off)
—
350
700
Fall Time
tf
—
340
680
Gate Charge
(V
12 Vd
I
3 0 Ad
QT
—
16
24
nC
(VDD = 12 Vdc, ID = 3.0 Adc,
(1)
Q1
—
1.5
—
( DD
, D
,
VGS = 10 Vdc) (1)
Q2
—
2.3
—
Q3
—
2.6
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.80
0.65
1.0
—
Vdc
Reverse Recovery Time
(I
3 0 Adc V
0 Vdc
trr
—
340
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
ta
—
120
—
dIS/dt = 100 A/s) ()
tb
—
220
—
Reverse Recovery Storage Charge
QRR
—
1.7
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
(4) Repetitive rating; pulse width limited by maximum junction temperature.
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