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参数资料
| 型号： | MBM100GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | MBM100GR12A |
1.5
1
0.5
0
50
100
150
TYPICAL
Switching
Time
,t
(
s)
Collector Current, IC (A)
Switching time vs. Collector current
ton
toff
Vcc
=600V
VGE
=±15V
RG
=12
TC
=25°C
Inductive Load
20
15
10
5
0
50
100
150
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Collector Current. IC (A)
Switching loss vs. Collector current
10
0.1
1
0.01
1
10
100
Switching
Time
,t
(
s)
Gate Resistance, RG (
)
Switching time vs. Gate resistance
ton
toff
VCC
=600V
VGE
=±15V
IC
=100A
TC
=25°C
Inductive Load
TYPICAL
100
10
1
0.1
1
10
100
Switching
Loss
,Et
on
,Et
off
,E
rr
(mJ/pulse)
Gate Resistance. RG (
)
Switching loss vs. Gate resistance
VCC
=600V
VGE
=±15V
IC
=100A
TC
=125°C
Inductive Load
Err
Eton
Etoff
VCC
=600V
VGE
=±15V
RG
=12
TC
=125°C
Inductive Load
1000
100
10
1
0.1
0
200
400
600
800
1000
1200
1400
Collector
Current,
Ic
(A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.01
0.1
1
10
T
ransient
Ther
mal
Impedance
,R
th(j-c)
(
°C/W
)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE
=±15V
RG
=12
TC
≤125°C
PDE-M100GR12A-0
tf
tr
tf
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