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参数资料
| 型号： | MBM150GR12A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 150 A, 1200 V, N-CHANNEL IGBT |
| 文件页数： | 1/4页 |
| 文件大小： | 126K |
| 代理商： | MBM150GR12A |
Hitachi IGBT Module / Silicon N-Channel IGBT
MBM150GR12A
PDE-M150GR12A-0
[Rated 150A/1200V, Dual-pack type]
FEATURES
OUTLINE DRAWING
Unit in mm
WeightF 230g
6
30
7
12
35
40
φ 0.8
2-
φ 5.6
25
35
4-Fast-on
Terminal #110
17
45
19
20
18.5
80
92
23
3-M5
C1
E2
C2E1
G1
E1
E2
G2
Low saturation voltage and high speed.
Low turn-OFF switching loss.
Low noise due to built-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
High reliability structure.
Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
E1
G1
G2
E2
C1
E2
C2E1
ABSOLUTE MAXIMUM RATINGS (TC=25°C)
Item
Symbol
Unit
Value
Collector-Emitter Voltage
VCES
V
1200
Gate-Emitter Voltage
VGES
V
±20
DC
IC
150
Collector Current
1ms
ICP
A
300
DC
IF
150
*1
Forward Current
1ms
IFM
A
300
Collector Power Dissipation
PC
W
1000
Junction Temperature
Tj
°C
-40 ~ +150
Storage Temperature
Tstg
°C
-40 ~ +125
Isolation Voltage
Viso
VRMS
2500(AC 1 minute)
Terminals
1.96
*2
Screw Torque
Mounting
-
Nm
1.96
*3
Notes; *1 : RMS current of diode
≤ 45 Arms
*2 ,*3 : Recommended value 1.67 Nm
CHARACTERISTICS (TC=25°C)
Item
Symbol
Unit
Min.
Typ.
Max.
Test Conditions
Collector-Emitter Cut-Off Current
ICES
mA
-
1.0
VCE=1200V, VGE=0V
Gate-Emitter Leakage Current
IGES
nA
-
±500
VGE=±20V, VCE=0V
Collector-Emitter Saturation Voltage
VCE(sat)
V
-
2.2
2.8
IC=150A, VGE=15V
Gate-Emitter Threshold Voltage
VGE(TO)
V
-
10
VCE=5V, IC=150mA
Input Capacitance
Cies
pF
-
12000
-
VCE=10V, VGE=0V, f=1MHz
Rise Time
tr
-
0.15
0.3
Turn-On Time
ton
-
0.3
0.6
Fall Time
tf
-
0.1
0.3
Switching Times
Turn-Off Time
toff
s
-
0.5
1.0
Reverse Recovery Time
trr
s
-
0.2
0.4
VCC=600V, IC=150A
RG=8.2
*4
VGE=±15V
Inductive Load
IF=150A
Peak Forward Voltage Drop
VFM
V
-
2.5
3.5
IF=150A, VGE=0V
IGBT
Rth(j-c)
0.125
Thermal Impedance
FWD
Rth(j-c)
°C/W
-
0.30
Junction to case
Notes; *4 : RG value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; For actual application,please confirm this spec.sheet is the newest revision.
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